IRF5210S MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF5210S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 40 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 120 nC
Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
Package: D2PAK
IRF5210S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF5210S Datasheet (PDF)
1.1. irf5210lpbf irf5210spbf.pdf 
Size:310K _international_rectifier
PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150°C Operating Temperature l Fast Switching RDS(on) = 60mΩ l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF5210S/L ID = -38A S l P-Channel l Lead-Free D D Description Features of this design are a 150°C
1.2. auirf5210s.pdf Size:236K _international_rectifier
AUTOMOTIVE GRADE AUIRF5210S Features HEXFET® Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175°C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc
1.3. irf5210s.pdf Size:186K _international_rectifier
PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5210S) VDSS = -100V Low-profile through-hole (IRF5210L) 175C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extrem
Datasheet: IRF520 , IRF520A , IRF520FI , IRF520N , IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF840 , IRF522 , IRF523 , IRF530 , IRF5305 , IRF5305L , IRF5305S , IRF530A , IRF530FI .
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