Справочник MOSFET. IRF5210S


IRF5210S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF5210S

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 200 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 10 V

Максимально допустимый постоянный ток стока (Id): 40 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 120 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.06 Ohm

Тип корпуса: D2PAK

Аналог (замена) для IRF5210S



IRF5210S Datasheet (PDF)

1.1. irf5210lpbf irf5210spbf.pdf Size:310K _international_rectifier


PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150°C Operating Temperature l Fast Switching RDS(on) = 60mΩ l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF5210S/L ID = -38A S l P-Channel l Lead-Free D D Description Features of this design are a 150°C

1.2. auirf5210s.pdf Size:236K _international_rectifier


AUTOMOTIVE GRADE AUIRF5210S Features HEXFET® Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175°C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc

 1.3. irf5210s.pdf Size:186K _international_rectifier


PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5210S) VDSS = -100V Low-profile through-hole (IRF5210L) 175C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extrem

1.4. irf5210spbf.pdf Size:206K _inchange_semiconductor


INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF5210SPBF ·FEATURES ·P-channel ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High speed switching ·Ultra low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25

Другие MOSFET... IRF520 , IRF520A , IRF520FI , IRF520N , IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF840 , IRF522 , IRF523 , IRF530 , IRF5305 , IRF5305L , IRF5305S , IRF530A , IRF530FI .


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