All MOSFET. IRF523 Datasheet

 

IRF523 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF523

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm

Package: TO220

IRF523 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF523 Datasheet (PDF)

0.1. irf520-fi irf521-fi irf522-fi irf523-fi.pdf Size:502K _st

IRF523
IRF523



9.1. irf520.pdf Size:297K _st

IRF523
IRF523

IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID IRF520 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 2 175 oC OPERATING TEMPERATURE 1 DESCRIPTION TO-220 This MOSFET series realized with STMicroelectronics unique STri

9.2. irf520a.pdf Size:243K _fairchild_semi

IRF523
IRF523

IRF520A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area TO-220 Ο 175 C Operating Temperature µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V Ω Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source

 9.3. irf5210lpbf irf5210spbf.pdf Size:310K _international_rectifier

IRF523
IRF523

PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150°C Operating Temperature l Fast Switching RDS(on) = 60mΩ l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF5210S/L ID = -38A S l P-Channel l Lead-Free D D Description Features of this design are a 150°C

9.4. irf520.pdf Size:180K _international_rectifier

IRF523
IRF523



 9.5. irf520v.pdf Size:200K _international_rectifier

IRF523
IRF523

PD - 94092 IRF520V HEXFET® Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.165Ω G Fast Switching Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to

9.6. auirf5210s.pdf Size:236K _international_rectifier

IRF523
IRF523

AUTOMOTIVE GRADE AUIRF5210S Features HEXFET® Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175°C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc

9.7. irf5210.pdf Size:125K _international_rectifier

IRF523
IRF523

PD - 91434A IRF5210 HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.06Ω Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

9.8. irf520s irf520spbf.pdf Size:195K _international_rectifier

IRF523
IRF523

IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 • Surface Mount RDS(on) ()VGS = 10 V 0.27 • Available in Tape and Reel Qg (Max.) (nC) 16 • Dynamic dV/dt Rating • Repetitive Avalanche Rated Qgs (nC) 4.4 • 175 °C Operating Temperature Qgd (nC) 7.7 • Fast Switching • Eas

9.9. irf5210pbf.pdf Size:189K _international_rectifier

IRF523
IRF523

PD - 95408 IRF5210PbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = -100V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.06Ω l P-Channel G l Fully Avalanche Rated ID = -40A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi

9.10. irf520vs.pdf Size:129K _international_rectifier

IRF523
IRF523

PD - 94306 IRF520VS IRF520VL HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.165Ω Fast Switching G Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing t

9.11. irf520nl.pdf Size:170K _international_rectifier

IRF523
IRF523

PD -91340A IRF520NS/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF520NS) VDSS = 100V Low-profile through-hole (IRF520NL) 175°C Operating Temperature RDS(on) = 0.20Ω Fast Switching G Fully Avalanche Rated ID = 9.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

9.12. irf520npbf.pdf Size:173K _international_rectifier

IRF523
IRF523

PD - 94818 IRF520NPbF HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175°C Operating Temperature Fast Switching RDS(on) = 0.20Ω Fully Avalanche Rated G Lead-Free Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are

9.13. irf520pbf.pdf Size:214K _international_rectifier

IRF523
IRF523

PD - 94850 IRF520PbF • Lead-Free 11/25/03 Document Number: 91017 www.vishay.com 1 IRF520PbF Document Number: 91017 www.vishay.com 2 IRF520PbF Document Number: 91017 www.vishay.com 3 IRF520PbF Document Number: 91017 www.vishay.com 4 IRF520PbF Document Number: 91017 www.vishay.com 5 IRF520PbF Document Number: 91017 www.vishay.com 6 IRF520PbF TO-220AB Package Outline

9.14. irf520n.pdf Size:116K _international_rectifier

IRF523
IRF523

PD - 91339A IRF520N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175°C Operating Temperature Fast Switching RDS(on) = 0.20Ω Fully Avalanche Rated G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benef

9.15. irf520s.pdf Size:179K _international_rectifier

IRF523
IRF523



9.16. irf5210s.pdf Size:186K _international_rectifier

IRF523
IRF523

PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF5210S) VDSS = -100V Low-profile through-hole (IRF5210L) 175°C Operating Temperature RDS(on) = 0.06Ω Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

9.17. irf520nlpbf.pdf Size:408K _international_rectifier

IRF523
IRF523

PD- 95749 IRF520NSPbF IRF520NLPbF • Lead-Free www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.com 3 IRF520NS/LPbF 4 www.irf.com IRF520NS/LPbF www.irf.com 5 IRF520NS/LPbF 6 www.irf.com IRF520NS/LPbF www.irf.com 7 IRF520NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 53

9.18. irf520ns.pdf Size:185K _international_rectifier

IRF523
IRF523

PD -91340A IRF520NS/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF520NS) VDSS = 100V Low-profile through-hole (IRF520NL) 175°C Operating Temperature RDS(on) = 0.20Ω Fast Switching G Fully Avalanche Rated ID = 9.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

9.19. irf520a.pdf Size:997K _samsung

IRF523
IRF523

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

9.20. irf520 sihf520.pdf Size:201K _vishay

IRF523
IRF523

IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 0.27 RoHS* • 175 °C Operating Temperature Qg (Max.) (nC) 16 COMPLIANT • Fast Switching Qgs (nC) 4.4 • Ease of Paralleling Qgd (nC) 7.7 • Simple Drive Requirements Configuration Single • Complia

9.21. irf520.pdf Size:229K _inchange_semiconductor

IRF523
IRF523

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF520 ·FEATURES ·Typical R =0.27Ω DS(on) ·Avalanche Rugged Technology ·High Current Capability ·Low Gate Charge ·175℃ Operating Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Current ,High Speed Switching ·DC-DC&DC-AC Converters ·Motor Control ,A

9.22. irf5210.pdf Size:279K _inchange_semiconductor

IRF523
IRF523

INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF5210,IIRF5210 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.06Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extreme

9.23. irf520fi.pdf Size:227K _inchange_semiconductor

IRF523
IRF523

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF520FI ·FEATURES ·Typical R =0.23Ω DS(on) ·Avalanche Rugged Technology ·High Current Capability ·Low Gate Charge ·175℃ Operating Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Current ,High Speed Switching ·DC-DC&DC-AC Converters ·Motor Control

9.24. irf5210spbf.pdf Size:206K _inchange_semiconductor

IRF523
IRF523

INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF5210SPBF ·FEATURES ·P-channel ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High speed switching ·Ultra low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25

9.25. irf520n.pdf Size:245K _inchange_semiconductor

IRF523
IRF523

isc N-Channel MOSFET Transistor IRF520N,IIRF520N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.2Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =2

9.26. irf520ns.pdf Size:258K _inchange_semiconductor

IRF523
IRF523

Isc N-Channel MOSFET Transistor IRF520NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

Datasheet: IRF520FI , IRF520N , IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF522 , IRFZ44 , IRF530 , IRF5305 , IRF5305L , IRF5305S , IRF530A , IRF530FI , IRF530N , IRF530NL .

 

 
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