FTK8810L Specs and Replacement
Type Designator: FTK8810L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12.5 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOT23-6L
FTK8810L substitution
- MOSFET ⓘ Cross-Reference Search
FTK8810L datasheet
ftk8810l.pdf
SEMICONDUCTOR FTK8810L TECHNICAL DATA Dual N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The FTK8810L use advanced trench technology to provide excellent SOT-23-6L RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. ABSOLUTE MAXIMUM RAT... See More ⇒
ftk8810.pdf
SEMICONDUCTOR FTK8810 TECHNICAL DATA DESCRIPTION The FTK8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON) ... See More ⇒
ftk8822.pdf
SEMICONDUCTOR FTK8822 TECHNICAL DATA D 1 D 2 DESCRIPTION The FTK8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G 1 G 2 with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch, S 1 S 2 facilitated by its common-drain configuration. Schematic diagram GENERAL FEATURES... See More ⇒
Detailed specifications: FTK1013, FTK1016, FTK1090, FTK10N10, FTK10N60DD, FTK10N60F, FTK10N60P, FTK8810, 10N65, FTK8822, FTK8N65DD, FTK8N65F, FTK8N65P, FTK8N80DD, FTK8N80F, FTK8N80P, FTK9435
Keywords - FTK8810L MOSFET specs
FTK8810L cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: FTK1013
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