FTK8810L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FTK8810L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 12.5 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: SOT23-6L
FTK8810L Datasheet (PDF)
ftk8810l.pdf
SEMICONDUCTORFTK8810LTECHNICAL DATADual N-Channel Enhancement Mode Field Effect Transistor DESCRIPTIONThe FTK8810L use advanced trench technology to provide excellent SOT-23-6L RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. ABSOLUTE MAXIMUM RAT
ftk8810.pdf
SEMICONDUCTORFTK8810TECHNICAL DATADESCRIPTION The FTK8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)
ftk8822.pdf
SEMICONDUCTOR FTK8822 TECHNICAL DATAD 1D 2DESCRIPTIONThe FTK8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G 1 G 2with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch, S 1 S 2facilitated by its common-drain configuration. Schematic diagramGENERAL FEATURES
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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