All MOSFET. FTK8N65F Datasheet

 

FTK8N65F Datasheet and Replacement


   Type Designator: FTK8N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO220F
 

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FTK8N65F Datasheet (PDF)

 7.1. Size:579K  first silicon
 ftk8n65p f dd.pdf pdf_icon

FTK8N65F

SEMICONDUCTORFTK8N65P / F / DDTECHNICAL DATA8.0 Amps, 650 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pul

 9.1. Size:272K  first silicon
 ftk8n80p f dd.pdf pdf_icon

FTK8N65F

SEMICONDUCTORFTK8N80P/D/DDTECHNICAL DATA8.0 Amps, 800 Volts N-Channel MOS-FETDESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superior TO-220switching performance,and Withstand high energy pulsein

Datasheet: FTK10N10 , FTK10N60DD , FTK10N60F , FTK10N60P , FTK8810 , FTK8810L , FTK8822 , FTK8N65DD , IRFZ46N , FTK8N65P , FTK8N80DD , FTK8N80F , FTK8N80P , FTK9435 , FTK9926 , FTK80N03D , FTK80N08 .

History: STV240N75F3 | HUFA76419D3 | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT

Keywords - FTK8N65F MOSFET datasheet

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