FTK8N65F MOSFET Datasheet: N-Ch, 650V, 7.5A. Full specification with pinout and replacement list

FTK8N65F Specs and Replacement

Type Designator: FTK8N65F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO220F

FTK8N65F substitution

- MOSFET ⓘ Cross-Reference Search

FTK8N65F datasheet

7.1. Size:579K first silicon
ftk8n65p f dd.pdf pdf_icon

SEMICONDUCTOR FTK8N65P / F / DD TECHNICAL DATA 8.0 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pul... See More ⇒

9.1. Size:272K first silicon
ftk8n80p f dd.pdf pdf_icon

SEMICONDUCTOR FTK8N80P/D/DD TECHNICAL DATA 8.0 Amps, 800 Volts N-Channel MOS-FET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse in... See More ⇒

Detailed specifications: FTK10N10, FTK10N60DD, FTK10N60F, FTK10N60P, FTK8810, FTK8810L, FTK8822, FTK8N65DD, SI2302, FTK8N65P, FTK8N80DD, FTK8N80F, FTK8N80P, FTK9435, FTK9926, FTK80N03D, FTK80N08