FTK9435
MOSFET. Datasheet pdf. Equivalent
Type Designator: FTK9435
Marking Code: Q9435
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 5.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22.5
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 420
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.053
Ohm
Package:
SOP8
FTK9435
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTK9435
Datasheet (PDF)
..1. Size:330K first silicon
ftk9435.pdf
SEMICONDUCTOR FTK9435 TECHNICAL DATA DDESCRIPTION The FTK9435 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagramD D D DGENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -5.3A RDS(ON)
9.1. Size:331K first silicon
ftk9452.pdf
SEMICONDUCTORFTK9452TECHNICAL DATAN-Channel 20-V(D-S) MOSFET ACHG The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, DDKultra low on- resistance and cost-effectiveness. F FDDIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10E 4.25 MAXG_+F 1.50 0.10G 0.
9.2. Size:215K first silicon
ftk9451.pdf
SEMICONDUCTORFTK9451TECHNICAL DATAP-Channel 20-V(D-S) MOSFET SOT-89 Description The Advanced Power MOSFETs provide the desigher with the 1. GATE best combination of fast switching, ruggedized device desigh, 2. DRAIN ultra low on- resistance and cost-effectiveness. 3. SOURCE 1 2 3 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Units Dr
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