FTK80N03D Specs and Replacement
Type Designator: FTK80N03D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO252
FTK80N03D substitution
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FTK80N03D datasheet
ftk80n03d.pdf
SEMICONDUCTOR FTK80N03D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK80N03D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0... See More ⇒
ftk80n08.pdf
SEMICONDUCTOR FTK80N08 TECHNICAL DATA N-CHANNEL MOSFET (75V/80A, Rds=10m ) Feathers TO-220 Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current 1 Avalanche Energy 100% test 2 3 Description The FTK80N08 is a new generation of middle voltag... See More ⇒
ftk80n10p.pdf
SEMICONDUCTOR FTK80N10P TECHNICAL DATA N-Channel Power MOSFET (100V/80A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 1.Gate 2.Drain ... See More ⇒
Detailed specifications: FTK8N65DD, FTK8N65F, FTK8N65P, FTK8N80DD, FTK8N80F, FTK8N80P, FTK9435, FTK9926, IRFZ24N, FTK80N08, FTK80N10P, FTK8205A, FTK830P, FTK830F, FTK830I, FTK830D, FTK84
Keywords - FTK80N03D MOSFET specs
FTK80N03D cross reference
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FTK80N03D replacement
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