FTK80N03D - параметры транзистора MOSFET, его аналоги, datasheet

FTK80N03D Datasheet (PDF)

..1. Size:336K first silicon
ftk80n03d.pdf pdf_icon

SEMICONDUCTORFTK80N03DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK80N03D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

7.1. Size:561K first silicon
ftk80n08.pdf pdf_icon

SEMICONDUCTORFTK80N08TECHNICAL DATAN-CHANNEL MOSFET (75V/80A, Rds=10m)Feathers: TO-220 Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current 1 Avalanche Energy 100% test 23Description: The FTK80N08 is a new generation of middle voltag

8.1. Size:232K first silicon
ftk80n10p.pdf pdf_icon

SEMICONDUCTORFTK80N10PTECHNICAL DATAN-Channel Power MOSFET (100V/80A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Symbol Rating Unit 1.Gate 2.Drain

Другие MOSFET... FTK8N65DD , FTK8N65F , FTK8N65P , FTK8N80DD , FTK8N80F , FTK8N80P , FTK9435 , FTK9926 , MMIS60R580P , FTK80N08 , FTK80N10P , FTK8205A , FTK830P , FTK830F , FTK830I , FTK830D , FTK84 .