Справочник MOSFET. FTK80N03D

 

FTK80N03D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FTK80N03D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 460 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: TO252

 Аналог (замена) для FTK80N03D

 

 

FTK80N03D Datasheet (PDF)

 ..1. Size:336K  first silicon
 ftk80n03d.pdf

FTK80N03D FTK80N03D

SEMICONDUCTORFTK80N03DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK80N03D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

 7.1. Size:561K  first silicon
 ftk80n08.pdf

FTK80N03D FTK80N03D

SEMICONDUCTORFTK80N08TECHNICAL DATAN-CHANNEL MOSFET (75V/80A, Rds=10m)Feathers: TO-220 Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current 1 Avalanche Energy 100% test 23Description: The FTK80N08 is a new generation of middle voltag

 8.1. Size:232K  first silicon
 ftk80n10p.pdf

FTK80N03D FTK80N03D

SEMICONDUCTORFTK80N10PTECHNICAL DATAN-Channel Power MOSFET (100V/80A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Symbol Rating Unit 1.Gate 2.Drain

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History: NTTD4401F

 

 
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