FTK830I MOSFET. Datasheet pdf. Equivalent
Type Designator: FTK830I
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 93 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 90 pF
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: TO251
FTK830I Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTK830I Datasheet (PDF)
8.1. ftk830 ftk830p f d i.pdf 
Size:262K _first_silicon
SEMICONDUCTOR FTK830P / F / D / I TECHNICAL DATA Power MOSFET 5A, 500V, 1.5 Ω, N-CHANNEL POWER MOSFET I : 1 TO - 251 DESCRIPTION D : 1 The N-Channel enhancement mode silicon gate power MOSFET TO - 252 is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. P : 1 TO - 220
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
