All MOSFET. FTK830I Datasheet

 

FTK830I MOSFET. Datasheet pdf. Equivalent

Type Designator: FTK830I

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 93 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO251

FTK830I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FTK830I Datasheet (PDF)

8.1. ftk830 ftk830p f d i.pdf Size:262K _first_silicon

FTK830I
FTK830I

SEMICONDUCTOR FTK830P / F / D / I TECHNICAL DATA Power MOSFET 5A, 500V, 1.5 Ω, N-CHANNEL POWER MOSFET I : 1 TO - 251 DESCRIPTION D : 1 The N-Channel enhancement mode silicon gate power MOSFET TO - 252 is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. P : 1 TO - 220

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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