All MOSFET. FTK830I Datasheet

 

FTK830I Datasheet and Replacement


   Type Designator: FTK830I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO251
 

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FTK830I Datasheet (PDF)

 8.1. Size:262K  first silicon
 ftk830 ftk830p f d i.pdf pdf_icon

FTK830I

SEMICONDUCTORFTK830P / F / D / ITECHNICAL DATAPower MOSFET5A, 500V, 1.5 ,N-CHANNEL POWER MOSFETI :1TO - 251DESCRIPTIOND :1The N-Channel enhancement mode silicon gate power MOSFETTO - 252is designed for high voltage, high speed power switchingapplications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.P :1TO - 220

Datasheet: FTK9435 , FTK9926 , FTK80N03D , FTK80N08 , FTK80N10P , FTK8205A , FTK830P , FTK830F , IRF730 , FTK830D , FTK84 , FTK840P , FTK840F , FTK84D , FTK7N60DD , FTK7N60F , FTK7N60P .

History: DH100P25E | 3N191 | HAT1128R | BLF6G27-10G | DH100P25 | 2SK3270-01 | FQN1N50C

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