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FTK830I Specs and Replacement

Type Designator: FTK830I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO251

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FTK830I datasheet

 8.1. Size:262K  first silicon
 ftk830 ftk830p f d i.pdf pdf_icon

FTK830I

SEMICONDUCTOR FTK830P / F / D / I TECHNICAL DATA Power MOSFET 5A, 500V, 1.5 , N-CHANNEL POWER MOSFET I 1 TO - 251 DESCRIPTION D 1 The N-Channel enhancement mode silicon gate power MOSFET TO - 252 is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. P 1 TO - 220... See More ⇒

Detailed specifications: FTK9435, FTK9926, FTK80N03D, FTK80N08, FTK80N10P, FTK8205A, FTK830P, FTK830F, IRFB31N20D, FTK830D, FTK84, FTK840P, FTK840F, FTK84D, FTK7N60DD, FTK7N60F, FTK7N60P

Keywords - FTK830I MOSFET specs

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