FTK7N60DD MOSFET Datasheet: N-Ch, 600V, 7A. Full specification with pinout and replacement list

FTK7N60DD Specs and Replacement

Type Designator: FTK7N60DD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO263

FTK7N60DD substitution

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FTK7N60DD datasheet

7.1. Size:247K first silicon
ftk7n60p f dd.pdf pdf_icon

SEMICONDUCTOR FTK7N60P / F / DD TECHNICAL DATA Power MOSFET 7.0 Amps, 600 Volts N-CHANNEL MOSFET P 1 DESCRIPTION TO-220 The FTK 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed F s... See More ⇒

8.1. Size:578K first silicon
ftk7n65p f dd.pdf pdf_icon

SEMICONDUCTOR FTK7N65P/F/DD TECHNICAL DATA 7.0 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse ... See More ⇒

Detailed specifications: FTK830P, FTK830F, FTK830I, FTK830D, FTK84, FTK840P, FTK840F, FTK84D, IRF830, FTK7N60F, FTK7N60P, FTK7N65P, FTK7N65F, FTK7N65DD, FTK75N75, FTK10N65DD, FTK10N65F