All MOSFET. FTK7N60F Datasheet

 

FTK7N60F Datasheet and Replacement


   Type Designator: FTK7N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220F
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FTK7N60F Datasheet (PDF)

 7.1. Size:247K  first silicon
 ftk7n60p f dd.pdf pdf_icon

FTK7N60F

SEMICONDUCTORFTK7N60P / F / DDTECHNICAL DATAPower MOSFET7.0 Amps, 600 VoltsN-CHANNEL MOSFET P :1DESCRIPTIONTO-220The FTK 7N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedF :s

 8.1. Size:578K  first silicon
 ftk7n65p f dd.pdf pdf_icon

FTK7N60F

SEMICONDUCTORFTK7N65P/F/DDTECHNICAL DATA7.0 Amps, 650 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pulse

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2N60L-AA3-R | MMBF5457 | 2N3797 | SKI10195 | IPD90N06S4-05 | MMN8220 | ECH8402

Keywords - FTK7N60F MOSFET datasheet

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