FTK7N60F MOSFET Datasheet: N-Ch, 600V, 7A. Full specification with pinout and replacement list

FTK7N60F Specs and Replacement

   Type Designator: FTK7N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220F

FTK7N60F substitution

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FTK7N60F datasheet

7.1. Size:247K first silicon
ftk7n60p f dd.pdf pdf_icon

SEMICONDUCTOR FTK7N60P / F / DD TECHNICAL DATA Power MOSFET 7.0 Amps, 600 Volts N-CHANNEL MOSFET P 1 DESCRIPTION TO-220 The FTK 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed F s... See More ⇒

8.1. Size:578K first silicon
ftk7n65p f dd.pdf pdf_icon

SEMICONDUCTOR FTK7N65P/F/DD TECHNICAL DATA 7.0 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse ... See More ⇒

Detailed specifications: FTK830F , FTK830I , FTK830D , FTK84 , FTK840P , FTK840F , FTK84D , FTK7N60DD , IRLB3034 , FTK7N60P , FTK7N65P , FTK7N65F , FTK7N65DD , FTK75N75 , FTK10N65DD , FTK10N65F , FTK10N65P .