All MOSFET. FTK7N60F Datasheet

 

FTK7N60F MOSFET. Datasheet pdf. Equivalent

Type Designator: FTK7N60F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 48 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 ┬░C

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 100 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO220F

FTK7N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FTK7N60F Datasheet (PDF)

3.1. ftk7n60p_f_dd.pdf Size:247K _first_silicon

FTK7N60F
FTK7N60F

´╗┐SEMICONDUCTOR FTK7N60P / F / DD TECHNICAL DATA Power MOSFET 7.0 Amps, 600 Volts N-CHANNEL MOSFET P : 1 DESCRIPTION TO-220 The FTK 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed F : s

4.1. ftk7n65p_f_dd.pdf Size:578K _first_silicon

FTK7N60F
FTK7N60F

´╗┐SEMICONDUCTOR FTK7N65P/F/DD TECHNICAL DATA 7.0 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P : Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse

Datasheet: FTK830F , FTK830I , FTK830D , FTK84 , FTK840P , FTK840F , FTK84D , FTK7N60DD , APT50M38JLL , FTK7N60P , FTK7N65P , FTK7N65F , FTK7N65DD , FTK75N75 , FTK10N65DD , FTK10N65F , FTK10N65P .

 


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