All MOSFET. FTK6401 Datasheet

 

FTK6401 Datasheet and Replacement


   Type Designator: FTK6401
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23
 

 FTK6401 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FTK6401 Datasheet (PDF)

 ..1. Size:287K  first silicon
 ftk6401.pdf pdf_icon

FTK6401

SEMICONDUCTORFTK6401TECHNICAL DATADDESCRIPTION The FTK6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -4.3A RDS(ON)

 8.1. Size:338K  first silicon
 ftk640p f.pdf pdf_icon

FTK6401

SEMICONDUCTORFTK640P / FTECHNICAL DATA19.4A, 200V, 0.18 , N-CHANNELPOWER MOSFETP :1DESCRIPTIONTO-220The N-Channel enhancement mode silicon gate power MOSFETis designed for high voltage, high speed power switchingapplications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.F :1TO-220FFEATURES* 19.4A, 200V, Low RDS(ON)

Datasheet: FTK7509 , FTK7510 , FTK7510F , FTK7510P , FTK6014 , FTK6014A , FTK60N04D , FTK60P05S , AON6414A , FTK640F , FTK640P , FTK6601 , FTK6601S , FTK6808 , FTK6N70P , FTK6N70F , FTK6N70I .

History: HP640 | BLP04N10-B | RQA0008NXAQS | AM2394NE | HGN093N12S | S-LNTK2575LT1G | GP1M015A050XX

Keywords - FTK6401 MOSFET datasheet

 FTK6401 cross reference
 FTK6401 equivalent finder
 FTK6401 lookup
 FTK6401 substitution
 FTK6401 replacement

 

 
Back to Top

 


 
.