FTK640F Specs and Replacement

Type Designator: FTK640F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO220F

FTK640F substitution

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FTK640F datasheet

 8.1. Size:287K  first silicon
 ftk6401.pdf pdf_icon

FTK640F

SEMICONDUCTOR FTK6401 TECHNICAL DATA D DESCRIPTION The FTK6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -4.3A RDS(ON) ... See More ⇒

 8.2. Size:338K  first silicon
 ftk640p f.pdf pdf_icon

FTK640F

SEMICONDUCTOR FTK640P / F TECHNICAL DATA 19.4A, 200V, 0.18 , N-CHANNEL POWER MOSFET P 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. F 1 TO-220F FEATURES * 19.4A, 200V, Low RDS(ON) ... See More ⇒

Detailed specifications: FTK7510, FTK7510F, FTK7510P, FTK6014, FTK6014A, FTK60N04D, FTK60P05S, FTK6401, IRF3710, FTK640P, FTK6601, FTK6601S, FTK6808, FTK6N70P, FTK6N70F, FTK6N70I, FTK6N70D

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