All MOSFET. IRF530FI Datasheet

 

IRF530FI Datasheet and Replacement


   Type Designator: IRF530FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: ISOWATT220
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IRF530FI Datasheet (PDF)

 7.1. Size:77K  st
irf530fp.pdf pdf_icon

IRF530FI

IRF530FPN - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORTYPE VDSS RDS(on) IDIRF530FP 100 V

 8.1. Size:166K  motorola
irf530.rev1.1.pdf pdf_icon

IRF530FI

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRF530/DProduct PreviewIRF530TMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high14 AMPERESenergy in the avalanche and commutation modes. This new energy100 VOLTSefficient design also offers a drainto

 8.2. Size:173K  motorola
irf530 mot.pdf pdf_icon

IRF530FI

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRF530/DAdvance InformationIRF530TMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high14 AMPERESenergy in the avalanche and commutation modes. This new energy100 VOLTSefficient design also offers a drain

 8.3. Size:175K  international rectifier
irf530.pdf pdf_icon

IRF530FI

Datasheet: IRF5210S , IRF522 , IRF523 , IRF530 , IRF5305 , IRF5305L , IRF5305S , IRF530A , IRF640N , IRF530N , IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 , IRF540A .

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