FTK6N70I Specs and Replacement

Type Designator: FTK6N70I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37.87 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: TO251

FTK6N70I substitution

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FTK6N70I datasheet

 7.1. Size:638K  first silicon
 ftk6n70p f d i.pdf pdf_icon

FTK6N70I

SEMICONDUCTOR FTK6N70P/F/D/I TECHNICAL DATA Power MOSFET 6.0 Amps, 700 Volts I N-CHANNEL MOSFET 1 TO - 251 D 1 DESCRIPTION TO - 252 The FTK6N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually us... See More ⇒

Detailed specifications: FTK6401, FTK640F, FTK640P, FTK6601, FTK6601S, FTK6808, FTK6N70P, FTK6N70F, 7N65, FTK6N70D, FTK50N06D, FTK50N06DD, FTK50N06F, FTK50N10P, FTK50P03PDFN56, FTK55P30D, FTK5903DC

Keywords - FTK6N70I MOSFET specs

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