FTK6N70D Datasheet and Replacement
Type Designator: FTK6N70D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 37.87 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
Package: TO252
FTK6N70D substitution
FTK6N70D Datasheet (PDF)
ftk6n70p f d i.pdf

SEMICONDUCTORFTK6N70P/F/D/ITECHNICAL DATAPower MOSFET6.0 Amps, 700 VoltsI :N-CHANNEL MOSFET 1TO - 251D :1DESCRIPTIONTO - 252The FTK6N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P :charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually us
Datasheet: FTK640F , FTK640P , FTK6601 , FTK6601S , FTK6808 , FTK6N70P , FTK6N70F , FTK6N70I , AON7408 , FTK50N06D , FTK50N06DD , FTK50N06F , FTK50N10P , FTK50P03PDFN56 , FTK55P30D , FTK5903DC , FTK5N50D .
History: WML20N70D1 | SIHB20N50E | JFAM20N60E | H5N60F | WMN25N65EM | AP06P20GJ-HF | AP0603GM-HF
Keywords - FTK6N70D MOSFET datasheet
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History: WML20N70D1 | SIHB20N50E | JFAM20N60E | H5N60F | WMN25N65EM | AP06P20GJ-HF | AP0603GM-HF



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