All MOSFET. IRF530N Datasheet

 

IRF530N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF530N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 79 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Package: TO220AB

IRF530N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF530N PDF doc:

1.1. irf530n_1.pdf Size:98K _philips

IRF530N
IRF530N

Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF530N FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 100 V • Fast switching • Low thermal resistance ID = 17 A g RDS(ON) ? 110 m? s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel enhancement mode PIN DESCRIPTION tab field-effect power transistor in a

1.2. irf530ns.pdf Size:178K _international_rectifier

IRF530N
IRF530N

PD - 91352A IRF530NS/L HEXFET® Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175°C Operating Temperature RDS(on) = 0.11? G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis

1.3. irf530n.pdf Size:212K _international_rectifier

IRF530N
IRF530N

PD - 91351 IRF530N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 90m? G Fast Switching Fully Avalanche Rated ID = 17A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si

Datasheet: IRF522 , IRF523 , IRF530 , IRF5305 , IRF5305L , IRF5305S , IRF530A , IRF530FI , IRF530 , IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI .

 


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