All MOSFET. FTK50P03PDFN56 Datasheet

 

FTK50P03PDFN56 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FTK50P03PDFN56
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 10 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 695 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: PDFN5X6-8L

 FTK50P03PDFN56 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FTK50P03PDFN56 Datasheet (PDF)

 ..1. Size:696K  first silicon
 ftk50p03pdfn56.pdf

FTK50P03PDFN56 FTK50P03PDFN56

SEMICONDUCTORFTK50P03PDFN56TECHNICAL DATAP-Channel Power MOSFETPDFN56-8L DESCRIPTION The FTK50P03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte

 9.1. Size:333K  first silicon
 ftk50n03d.pdf

FTK50P03PDFN56 FTK50P03PDFN56

SEMICONDUCTORFTK50N03DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK50N03D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

 9.2. Size:336K  first silicon
 ftk50n06d.pdf

FTK50P03PDFN56 FTK50P03PDFN56

SEMICONDUCTORFTK50N06DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK50N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

 9.3. Size:222K  first silicon
 ftk50n06 ftk50n06p f.pdf

FTK50P03PDFN56 FTK50P03PDFN56

SEMICONDUCTORFTK50N06P / FTECHNICAL DATAPower MOSFET50 Amps, 60 VoltsN-CHANNEL POWER MOSFET P :1TO-220 DESCRIPTION The FTK50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max F :threshold voltages of 4 volt. 1It is mainly suitable electronic

 9.4. Size:255K  first silicon
 ftk50n06dd.pdf

FTK50P03PDFN56 FTK50P03PDFN56

SEMICONDUCTORFTK50N06DDTECHNICAL DATAN-Channel Power MOSFET (60V/50A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Rating Symbol Unit V 60 V DSS

 9.5. Size:202K  first silicon
 ftk50n10p.pdf

FTK50P03PDFN56 FTK50P03PDFN56

SEMICONDUCTORFTK50N10PTECHNICAL DATAN-Channel Power MOSFET (100V/50A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Symbol Rating Unit V 100 V DS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STP40N10FI | 2N6968JANTXV

 

 
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