Справочник MOSFET. FTK50P03PDFN56

 

FTK50P03PDFN56 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FTK50P03PDFN56
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 10 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 695 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: PDFN5X6-8L
 

 Аналог (замена) для FTK50P03PDFN56

   - подбор ⓘ MOSFET транзистора по параметрам

 

FTK50P03PDFN56 Datasheet (PDF)

 ..1. Size:696K  first silicon
ftk50p03pdfn56.pdfpdf_icon

FTK50P03PDFN56

SEMICONDUCTORFTK50P03PDFN56TECHNICAL DATAP-Channel Power MOSFETPDFN56-8L DESCRIPTION The FTK50P03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte

 9.1. Size:333K  first silicon
ftk50n03d.pdfpdf_icon

FTK50P03PDFN56

SEMICONDUCTORFTK50N03DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK50N03D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

 9.2. Size:336K  first silicon
ftk50n06d.pdfpdf_icon

FTK50P03PDFN56

SEMICONDUCTORFTK50N06DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK50N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

 9.3. Size:222K  first silicon
ftk50n06 ftk50n06p f.pdfpdf_icon

FTK50P03PDFN56

SEMICONDUCTORFTK50N06P / FTECHNICAL DATAPower MOSFET50 Amps, 60 VoltsN-CHANNEL POWER MOSFET P :1TO-220 DESCRIPTION The FTK50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max F :threshold voltages of 4 volt. 1It is mainly suitable electronic

Другие MOSFET... FTK6N70P , FTK6N70F , FTK6N70I , FTK6N70D , FTK50N06D , FTK50N06DD , FTK50N06F , FTK50N10P , 12N60 , FTK55P30D , FTK5903DC , FTK5N50D , FTK5N80DD , FTK5N80F , FTK5N80P , FTK50N03D , FTK50N06P .

History: GWM100-01X1-SL | DMN66D0LW | AOTF25S65 | B50N06

 

 
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