All MOSFET. FTK5N80DD Datasheet

 

FTK5N80DD Datasheet and Replacement


   Type Designator: FTK5N80DD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO263
 

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FTK5N80DD Datasheet (PDF)

 7.1. Size:616K  first silicon
 ftk5n80p f dd.pdf pdf_icon

FTK5N80DD

SEMICONDUCTORFTK5N80P/D/DDTECHNICAL DATA5.0 Amps, 800 Volts N-Channel MOS-FETDESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superior TO-220switching performance,and Withstand high energy pulsein

 9.1. Size:338K  first silicon
 ftk5n50d.pdf pdf_icon

FTK5N80DD

SEMICONDUCTORFTK5N50DTECHNICAL DATA4.4A, 500V, 1.5 A KDIM MILLIMETERSLC D_A 6 60 + 0 20N-CHANNEL POWER MOSFET_B 6 10 + 0 20_C 5 34 + 0 30_D 0 70 + 0 20_E 2 70 0 15+B_+F 2 30 0 10G 0 96 MAXH 0 90 MAXHJ_J 1 80 + 0 20DESCRIPTIONE_K 2 30 + 0 10G N_L 0 50 0 10+F F M _+M 0 50 0 10 FTK5N50D is 500V High voltage N-Chan

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Keywords - FTK5N80DD MOSFET datasheet

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