FTK5N80F Specs and Replacement

Type Designator: FTK5N80F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 77 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO220F

FTK5N80F substitution

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FTK5N80F datasheet

 7.1. Size:616K  first silicon
 ftk5n80p f dd.pdf pdf_icon

FTK5N80F

SEMICONDUCTOR FTK5N80P/D/DD TECHNICAL DATA 5.0 Amps, 800 Volts N-Channel MOS-FET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse in... See More ⇒

 9.1. Size:338K  first silicon
 ftk5n50d.pdf pdf_icon

FTK5N80F

SEMICONDUCTOR FTK5N50D TECHNICAL DATA 4.4A, 500V, 1.5 A K DIM MILLIMETERS L C D _ A 6 60 + 0 20 N-CHANNEL POWER MOSFET _ B 6 10 + 0 20 _ C 5 34 + 0 30 _ D 0 70 + 0 20 _ E 2 70 0 15 + B _ + F 2 30 0 10 G 0 96 MAX H 0 90 MAX H J _ J 1 80 + 0 20 DESCRIPTION E _ K 2 30 + 0 10 G N _ L 0 50 0 10 + F F M _ + M 0 50 0 10 FTK5N50D is 500V High voltage N-Chan... See More ⇒

Detailed specifications: FTK50N06DD, FTK50N06F, FTK50N10P, FTK50P03PDFN56, FTK55P30D, FTK5903DC, FTK5N50D, FTK5N80DD, AO3401, FTK5N80P, FTK50N03D, FTK50N06P, FTK1206, FTK1208, FTK1216, FTK12N10S, FTK12N65DD

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.