FTK1N60I Specs and Replacement

Type Designator: FTK1N60I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm

Package: TO251

FTK1N60I substitution

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FTK1N60I datasheet

 7.1. Size:220K  first silicon
 ftk1n60t-l.pdf pdf_icon

FTK1N60I

SEMICONDUCTOR FTK1N60T/L TECHNICAL DATA Power MOSFET 1.0 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The FTK 1N60T/L is a high voltage MOSFET and is designed to 1 have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche T TO-92 characteristics. This power MOSFET is usually used at high speed switching app... See More ⇒

 7.2. Size:288K  first silicon
 ftk1n60p f d i.pdf pdf_icon

FTK1N60I

SEMICONDUCTOR FTK1N60P / F / D / I TECHNICAL DATA Power MOSFET 1.0 Amps, 600 Volts I N-CHANNEL MOSFET 1 TO - 251 D 1 DESCRIPTION TO - 252 The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu... See More ⇒

Detailed specifications: FTK12N65P, FTK138, FTK138D, FTK138U, FTK15N10D, FTK1N60P, FTK1N60F, FTK1N60D, STP80NF70, FTK1N60T, FTK1N60L, FTK2N60D, FTK2N60F, FTK2N60I, FTK2N60P, FTK2N65D, FTK2N65F

Keywords - FTK1N60I MOSFET specs

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