FTK2N60F Specs and Replacement

Type Designator: FTK2N60F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO220F

FTK2N60F substitution

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FTK2N60F datasheet

 7.1. Size:295K  first silicon
 ftk2n60p f d i.pdf pdf_icon

FTK2N60F

SEMICONDUCTOR FTK2N60P / F / D / I TECHNICAL DATA 2 Amps, 600 Volts N-CHANNEL MOSFET I 1 TO - 251 DESCRIPTION The FTK 2N60 is a high voltage MOSFET and is designed to D have better characteristics, such as fast switching time, low gate 1 TO - 252 charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high sp... See More ⇒

 8.1. Size:340K  first silicon
 ftk2n65p f d i.pdf pdf_icon

FTK2N60F

SEMICONDUCTOR FTK2N65P / F / D / I TECHNICAL DATA 2 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS I technology. 1 This advanced technology has been especially tailored TO - 251 to minimize on - state resistance , provide superior switching performance,and Withstand high energy... See More ⇒

Detailed specifications: FTK15N10D, FTK1N60P, FTK1N60F, FTK1N60D, FTK1N60I, FTK1N60T, FTK1N60L, FTK2N60D, BS170, FTK2N60I, FTK2N60P, FTK2N65D, FTK2N65F, FTK2N65I, FTK2N65P, FTK4N60D, FTK4N60F

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