All MOSFET. FTK2102 Datasheet

 

FTK2102 Datasheet and Replacement


   Type Designator: FTK2102
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 2.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT323
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FTK2102 Datasheet (PDF)

 ..1. Size:144K  first silicon
 ftk2102.pdf pdf_icon

FTK2102

SEMICONDUCTORFTK2102TECHNICAL DATA20V N-Channel Enhancement-Mode MOSFET FEATURE 3Leading Trench Technology for Low RDS(on) Extending Battery Life 21SOT323APPLICATIONS High Side Load Switch Charging Circuit 3 Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc 1 2 MARKING: TS2 Maximum ratings (Ta=25 unless otherwise noted)

 8.1. Size:162K  first silicon
 ftk2101.pdf pdf_icon

FTK2102

SEMICONDUCTORFTK2101TECHNICAL DATA20V P-Channel Enhancement-Mode MOSFET FEATURE 3Leading Trench Technology for Low RDS(on) Extending Battery Life 21SOT323APPLICATIONS High Side Load Switch Charging Circuit 3D Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc G1S2MARKING: TS1 Maximum ratings (Ta=25 unless otherwise n

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History: 2SK1984-01MR | FTK730P | HUFA76639S3S | 3SK59 | 2SK2745 | IRF7483M | KI2308DS

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