FTK2306
MOSFET. Datasheet pdf. Equivalent
Type Designator: FTK2306
Marking Code: RO
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.38
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.5
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
SOT23
FTK2306
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTK2306
Datasheet (PDF)
..1. Size:344K first silicon
ftk2306.pdf
SEMICONDUCTOR FTK2306TECHNICAL DATADDESCRIPTION The FTK2306 uses advanced trench technology to provide excellent RDS(ON), Glow gate charge and operation with gate voltages as low as 2.5V. SSchematic diagramGENERAL FEATURES D VDS = 30V,ID = 5A 3RDS(ON)
0.1. Size:420K first silicon
ftk2306a.pdf
SEMICONDUCTOR FTK2306ATECHNICAL DATAN-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 47m@10V30V3.16A65m@4.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING Equivalent Circuit Maximum ratings (at TA=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source
8.1. Size:281K first silicon
ftk2304.pdf
SEMICONDUCTORFTK2304TECHNICAL DATADDESCRIPTIONThe FTK2304 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURES D VDS = 30V ,ID = 3.3A 3RDS(ON)
8.2. Size:247K first silicon
ftk2302.pdf
SEMICONDUCTORFTK2302TECHNICAL DATA20V N-Channel Enhancement-Mode MOSFET DDESCRIPTION The FTK2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,I
8.3. Size:284K first silicon
ftk2301.pdf
SEMICONDUCTORFTK2301TECHNICAL DATA20V P-Channel Enhancement-Mode MOSFET 3 Features Low on-resistance2R =4.5V, I =2.8A ) = 100mDS(ON) (VGS ds1R =2.5V, I =2.0A ) = 150mDS(ON) (VGS dsSOT 23 (TO236AB)High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM3D We declare that
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