FTK2306 - описание и поиск аналогов

 ..1. Size:344K  first silicon
 ftk2306.pdf 

SEMICONDUCTOR FTK2306 TECHNICAL DATA D DESCRIPTION The FTK2306 uses advanced trench technology to provide excellent RDS(ON), G low gate charge and operation with gate voltages as low as 2.5V. S Schematic diagram GENERAL FEATURES D VDS = 30V,ID = 5A 3 RDS(ON)

 0.1. Size:420K  first silicon
 ftk2306a.pdf 

SEMICONDUCTOR FTK2306A TECHNICAL DATA N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 47m @10V 30V 3.16A 65m @4.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING Equivalent Circuit Maximum ratings (at TA=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source

 8.1. Size:281K  first silicon
 ftk2304.pdf 

SEMICONDUCTOR FTK2304 TECHNICAL DATA D DESCRIPTION The FTK2304 uses advanced trench technology to G provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D VDS = 30V ,ID = 3.3A 3 RDS(ON)

 8.2. Size:247K  first silicon
 ftk2302.pdf 

SEMICONDUCTOR FTK2302 TECHNICAL DATA 20V N-Channel Enhancement-Mode MOSFET D DESCRIPTION The FTK2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,I

 8.3. Size:284K  first silicon
 ftk2301.pdf 

SEMICONDUCTOR FTK2301 TECHNICAL DATA 20V P-Channel Enhancement-Mode MOSFET 3 Features Low on-resistance 2 R =4.5V, I =2.8A ) = 100m DS(ON) (VGS ds 1 R =2.5V, I =2.0A ) = 150m DS(ON) (VGS ds SOT 23 (TO 236AB) High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 3 D We declare that