All MOSFET. IRF540 Datasheet

 

IRF540 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF540

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 72 nC

Drain-Source Capacitance (Cd): 2100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.077 Ohm

Package: TO220

IRF540 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF540 Datasheet (PDF)

0.1. irf540.rev3.2.pdf Size:142K _motorola

IRF540
IRF540

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRF540/DProduct PreviewIRF540TMOS E-FET.Power Field Effect TransistorN Channel Enhancement Mode Silicon GateTMOS POWER FET

0.2. irf540 mot.pdf Size:144K _motorola

IRF540
IRF540

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRF540/DAdvance InformationIRF540TMOS E-FET.Power Field Effect TransistorN Channel Enhancement Mode Silicon GateTMOS POWER

 0.3. irf540 s 1.pdf Size:88K _philips

IRF540
IRF540

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF540, IRF540S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 AgRDS(ON) 77 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic envelope us

0.4. irf540 irf541 irf542 irf543-fi.pdf Size:481K _st

IRF540
IRF540

 0.5. irf540.pdf Size:53K _st

IRF540
IRF540

IRF540IRF540FIN - CHANNEL100V - 00.50 - 30A - TO-220/TO-220FIPOWER MOSFETTYPE VDSS RDS(on) IDIRF540 100 V

0.6. irf540a.pdf Size:256K _fairchild_semi

IRF540
IRF540

IRF540AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input CapacitanceID = 28 A Improved Gate Charge Extended Safe Operating AreaTO-220 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 (Typ.)1231.Gate 2. Drain 3. Sour

0.7. irf540 rf1s540sm.pdf Size:112K _fairchild_semi

IRF540
IRF540

IRF540, RF1S540SMData Sheet January 200228A, 100V, 0.077 Ohm, N-Channel Power FeaturesMOSFETs 28A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.077power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala

0.8. irf540.pdf Size:146K _fairchild_semi

IRF540
IRF540

0.9. irf540zlpbf irf540zspbf.pdf Size:376K _international_rectifier

IRF540
IRF540

PD - 95531AIRF540ZPbFIRF540ZSPbFIRF540ZLPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 26.5mG Lead-FreeID = 36ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremel

0.10. irf540n.pdf Size:99K _international_rectifier

IRF540
IRF540

PD - 91341BIRF540NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 44mG Fast Switching Fully Avalanche RatedID = 33ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

0.11. irf540zpbf.pdf Size:302K _international_rectifier

IRF540
IRF540

PD - 94758IRF540ZAUTOMOTIVE MOSFETIRF540ZSIRF540ZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 26.5mGDescriptionID = 36ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE

0.12. irf540npbf.pdf Size:153K _international_rectifier

IRF540
IRF540

PD - 94812IRF540NPbFHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 44m Fast SwitchingG Fully Avalanche RatedID = 33A Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely l

0.13. auirf540zstrl.pdf Size:326K _international_rectifier

IRF540
IRF540

PD - 96326AUTOMOTIVE GRADEAUIRF540ZAUIRF540ZSFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance V(BR)DSS100Vl 175C Operating TemperatureRDS(on) typ.21ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxGmax. 26.5ml Lead-Free, RoHS CompliantID 36Al Automotive Qualified *SDescriptionSpecifically designe

0.14. irf540pbf.pdf Size:1312K _international_rectifier

IRF540
IRF540

PD - 94848IRF540PbF Lead-Free11/17/03Document Number: 91021 www.vishay.com1IRF540PbFDocument Number: 91021 www.vishay.com2IRF540PbFDocument Number: 91021 www.vishay.com3IRF540PbFDocument Number: 91021 www.vishay.com4IRF540PbFDocument Number: 91021 www.vishay.com5IRF540PbFDocument Number: 91021 www.vishay.com6IRF540PbFTO-220AB Package Outline

0.15. irf540spbf.pdf Size:1411K _international_rectifier

IRF540
IRF540

PD- 95983IRF540SPbF Lead-Free12/21/04Document Number: 91022 www.vishay.com1IRF540SPbFDocument Number: 91022 www.vishay.com2IRF540SPbFDocument Number: 91022 www.vishay.com3IRF540SPbFDocument Number: 91022 www.vishay.com4IRF540SPbFDocument Number: 91022 www.vishay.com5IRF540SPbFDocument Number: 91022 www.vishay.com6IRF540SPbFPeak Diode Recovery

0.16. irf540s.pdf Size:184K _international_rectifier

IRF540
IRF540

0.17. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

IRF540
IRF540

PD - 95130IRF540NSPbFIRF540NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 44ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from ID = 33AInternational Rectifier utilize advanced processing Stechniques to achi

0.18. irf540s irf540spbf.pdf Size:196K _international_rectifier

IRF540
IRF540

IRF540S, SiHF540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Surface MountRDS(on) ()VGS = 10 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 72 Dynamic dV/dt RatingQgs (nC) 11 Repetitive Avalanche RatedQgd (nC) 32 175 C Operating TemperatureConfiguration Single Fa

0.19. irf540z.pdf Size:173K _international_rectifier

IRF540
IRF540

PD - 94644IRF540ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 29.5m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 34ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes t

0.20. irf540ns.pdf Size:125K _international_rectifier

IRF540
IRF540

PD - 91342IRF540NSIRF540NL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche RatedRDS(on) = 44mDescription GAdvanced HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processing ID = 33AStechniques to achieve extremely low on-r

0.21. irf540.pdf Size:177K _international_rectifier

IRF540
IRF540

0.22. irf540a.pdf Size:951K _samsung

IRF540
IRF540

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input CapacitanceID = 28 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximu

0.23. irf540 sihf540.pdf Size:202K _vishay

IRF540
IRF540

IRF540, SiHF540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.077RoHS* 175 C Operating TemperatureQg (Max.) (nC) 72COMPLIANT Fast SwitchingQgs (nC) 11 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Complian

0.24. irf540npbf.pdf Size:153K _infineon

IRF540
IRF540

PD - 94812IRF540NPbFHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 44m Fast SwitchingG Fully Avalanche RatedID = 33A Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely l

0.25. auirf540z auirf540zs.pdf Size:702K _infineon

IRF540
IRF540

AUIRF540Z AUTOMOTIVE GRADE AUIRF540ZS Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 175C Operating Temperature 21m Fast Switching max. 26.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 36A Automotive Qualified * Description D

0.26. irf540ns irf540nl.pdf Size:277K _infineon

IRF540
IRF540

PD - 91342BIRF540NSIRF540NLl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 44mDescription GAdvanced HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processing ID = 33AStechniques to achieve extremely l

0.27. irf540z irf540zs irf540zl.pdf Size:302K _infineon

IRF540
IRF540

PD - 94758IRF540ZAUTOMOTIVE MOSFETIRF540ZSIRF540ZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 26.5mGDescriptionID = 36ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE

0.28. irf540ns.pdf Size:2432K _kexin

IRF540
IRF540

SMD Type MOSFETN-Channel MOSFETIRF540NS (KRF540NS)TO-263Unit:mm 9.65 (Min)10.67 (Max) Features5.33 (Min) VDS (V) = 100V 90 ~ 93 ID = 33 A (VGS = 10V) RDS(ON) 44m (VGS = 10V)6.22 (min) Fast Switching 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max)1.65 (max)D1.27~1.781.14~1.400.43~0.63G 1 Gate0.51~0.992 Drain 2.543 Sour

0.29. irf540n.pdf Size:244K _inchange_semiconductor

IRF540
IRF540

isc N-Channel MOSFET Transistor IRF540NIIRF540NFEATURESStatic drain-source on-resistance:RDS(on) 0.044Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

0.30. irf540fi.pdf Size:205K _inchange_semiconductor

IRF540
IRF540

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF540FIFEATURESLow RDS(on)V Rated at 20VGSSilicon Gate for Fast Switching SpeedRuggedLow Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned especially for high voltage,high speed applications,such as off-line switching power su

0.31. irf540npbf.pdf Size:242K _inchange_semiconductor

IRF540
IRF540

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF540NPBFFEATURESDrain Current I = 33A@ T =25D CStatic Drain-Source On-Resistance: R = 44m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationDESCRITIONDesigned especially for high voltage,high speed applications,such as off-line switchi

0.32. irf540nl.pdf Size:255K _inchange_semiconductor

IRF540
IRF540

Isc N-Channel MOSFET Transistor IRF540NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

0.33. irf540zs.pdf Size:258K _inchange_semiconductor

IRF540
IRF540

Isc N-Channel MOSFET Transistor IRF540ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

0.34. irf540z.pdf Size:251K _inchange_semiconductor

IRF540
IRF540

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF540ZIIRF540ZFEATURESStatic drain-source on-resistance:RDS(on) 0.0265Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

0.35. irf540ns.pdf Size:257K _inchange_semiconductor

IRF540
IRF540

Isc N-Channel MOSFET Transistor IRF540NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

0.36. irf540a.pdf Size:283K _inchange_semiconductor

IRF540
IRF540

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF540AFEATURESStatic drain-source on-resistance:RDS(on) 52m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies.ABSOLUTE MAXIMUM RATINGS(T =25

0.37. irf540.pdf Size:227K _inchange_semiconductor

IRF540
IRF540

isc N-Channel Mosfet Transistor IRF540FEATURESLow RDS(on)V Rated at 20VGSSilicon Gate for Fast Switching SpeedRuggedLow Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmoto

0.38. irf540zl.pdf Size:256K _inchange_semiconductor

IRF540
IRF540

Isc N-Channel MOSFET Transistor IRF540ZLFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: IRF530A , IRF530FI , IRF530N , IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , RFP50N06 , IRF540A , IRF540FI , IRF540N , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 .

 

 
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