All MOSFET. IRF540 Datasheet

 

IRF540 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF540

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 72 nC

Drain-Source Capacitance (Cd): 2100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.077 Ohm

Package: TO220

IRF540 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF540 Datasheet (PDF)

0.1. irf540.rev3.2.pdf Size:142K _motorola

IRF540
IRF540

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Product Preview IRF540 TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET

0.2. irf540 mot.pdf Size:144K _motorola

IRF540
IRF540

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Advance Information IRF540 TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER

 0.3. irf540 s 1.pdf Size:88K _philips

IRF540
IRF540

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF540, IRF540S FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 100 V • Fast switching • Low thermal resistance ID = 23 A g RDS(ON) ≤ 77 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope us

0.4. irf540 irf541 irf542 irf543-fi.pdf Size:481K _st

IRF540
IRF540



 0.5. irf540.pdf Size:53K _st

IRF540
IRF540

IRF540 IRF540FI N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI POWER MOSFET TYPE VDSS RDS(on) ID IRF540 100 V < 0.077 Ω 30 A IRF540FI 100 V < 0.077 Ω 16 A TYPICAL R = 0.050 Ω DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 3 HIGH CURRENT CAPABILITY 2 2 175oC OPERATING TEMPERATURE 1 1 APPLICATION ORI

0.6. irf540a.pdf Size:256K _fairchild_semi

IRF540
IRF540

IRF540A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area TO-220 Ο 175 C Operating Temperature µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V Ω Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Sour

0.7. irf540 rf1s540sm.pdf Size:112K _fairchild_semi

IRF540
IRF540

IRF540, RF1S540SM Data Sheet January 2002 28A, 100V, 0.077 Ohm, N-Channel Power Features MOSFETs • 28A, 100V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.077Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala

0.8. irf540.pdf Size:146K _fairchild_semi

IRF540
IRF540



0.9. irf540zlpbf irf540zspbf.pdf Size:376K _international_rectifier

IRF540
IRF540

PD - 95531A IRF540ZPbF IRF540ZSPbF IRF540ZLPbF Features HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 26.5mΩ G Lead-Free ID = 36A Description S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremel

0.10. irf540n.pdf Size:99K _international_rectifier

IRF540
IRF540

PD - 91341B IRF540N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 44mΩ G Fast Switching Fully Avalanche Rated ID = 33A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan

0.11. irf540zpbf.pdf Size:302K _international_rectifier

IRF540
IRF540

PD - 94758 IRF540Z AUTOMOTIVE MOSFET IRF540ZS IRF540ZL Features HEXFET® Power MOSFET ● Advanced Process Technology D ● Ultra Low On-Resistance VDSS = 100V ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax RDS(on) = 26.5mΩ G Description ID = 36A Specifically designed for Automotive applications, S this HEXFET® Power MOSFE

0.12. irf540npbf.pdf Size:153K _international_rectifier

IRF540
IRF540

PD - 94812 IRF540NPbF HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 44mΩ Fast Switching G Fully Avalanche Rated ID = 33A Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

0.13. auirf540zstrl.pdf Size:326K _international_rectifier

IRF540
IRF540

PD - 96326 AUTOMOTIVE GRADE AUIRF540Z AUIRF540ZS Features HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance V(BR)DSS 100V l 175°C Operating Temperature RDS(on) typ. 21mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 26.5mΩ l Lead-Free, RoHS Compliant ID 36A l Automotive Qualified * S Description Specifically designe

0.14. irf540pbf.pdf Size:1312K _international_rectifier

IRF540
IRF540

PD - 94848 IRF540PbF • Lead-Free 11/17/03 Document Number: 91021 www.vishay.com 1 IRF540PbF Document Number: 91021 www.vishay.com 2 IRF540PbF Document Number: 91021 www.vishay.com 3 IRF540PbF Document Number: 91021 www.vishay.com 4 IRF540PbF Document Number: 91021 www.vishay.com 5 IRF540PbF Document Number: 91021 www.vishay.com 6 IRF540PbF TO-220AB Package Outline

0.15. irf540spbf.pdf Size:1411K _international_rectifier

IRF540
IRF540

PD- 95983 IRF540SPbF • Lead-Free 12/21/04 Document Number: 91022 www.vishay.com 1 IRF540SPbF Document Number: 91022 www.vishay.com 2 IRF540SPbF Document Number: 91022 www.vishay.com 3 IRF540SPbF Document Number: 91022 www.vishay.com 4 IRF540SPbF Document Number: 91022 www.vishay.com 5 IRF540SPbF Document Number: 91022 www.vishay.com 6 IRF540SPbF Peak Diode Recovery

0.16. irf540s.pdf Size:184K _international_rectifier

IRF540
IRF540



0.17. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

IRF540
IRF540

PD - 95130 IRF540NSPbF IRF540NLPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 44mΩ l Lead-Free G Description Advanced HEXFET Power MOSFETs from ID = 33A International Rectifier utilize advanced processing S techniques to achi

0.18. irf540s irf540spbf.pdf Size:196K _international_rectifier

IRF540
IRF540

IRF540S, SiHF540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Surface Mount RDS(on) ()VGS = 10 V 0.077 • Available in Tape and Reel Qg (Max.) (nC) 72 • Dynamic dV/dt Rating Qgs (nC) 11 • Repetitive Avalanche Rated Qgd (nC) 32 • 175 °C Operating Temperature Configuration Single • Fa

0.19. irf540z.pdf Size:173K _international_rectifier

IRF540
IRF540

PD - 94644 IRF540Z AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 29.5mΩ 175°C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 34A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t

0.20. irf540ns.pdf Size:125K _international_rectifier

IRF540
IRF540

PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44mΩ Description G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-r

0.21. irf540.pdf Size:177K _international_rectifier

IRF540
IRF540



0.22. irf540a.pdf Size:951K _samsung

IRF540
IRF540

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area Ο 175 Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Ω Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximu

0.23. irf540 sihf540.pdf Size:202K _vishay

IRF540
IRF540

IRF540, SiHF540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 0.077 RoHS* • 175 °C Operating Temperature Qg (Max.) (nC) 72 COMPLIANT • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 32 • Simple Drive Requirements Configuration Single • Complian

0.24. irf540n.pdf Size:244K _inchange_semiconductor

IRF540
IRF540

isc N-Channel MOSFET Transistor IRF540N,IIRF540N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.044Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SY

0.25. irf540fi.pdf Size:205K _inchange_semiconductor

IRF540
IRF540

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF540FI ·FEATURES ·Low R DS(on) ·V Rated at ±20V GS ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power su

0.26. irf540npbf.pdf Size:242K _inchange_semiconductor

IRF540
IRF540

INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF540NPBF ·FEATURES ·Drain Current I = 33A@ T =25℃ D C ·Static Drain-Source On-Resistance : R = 44mΩ(Max) DS(on) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switchi

0.27. irf540zs.pdf Size:258K _inchange_semiconductor

IRF540
IRF540

Isc N-Channel MOSFET Transistor IRF540ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

0.28. irf540z.pdf Size:251K _inchange_semiconductor

IRF540
IRF540

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF540Z,IIRF540Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.0265Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

0.29. irf540ns.pdf Size:257K _inchange_semiconductor

IRF540
IRF540

Isc N-Channel MOSFET Transistor IRF540NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

0.30. irf540a.pdf Size:283K _inchange_semiconductor

IRF540
IRF540

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF540A FEATURES ·Static drain-source on-resistance: RDS(on) ≤52mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies. ABSOLUTE MAXIMUM RATINGS(T =25

0.31. irf540.pdf Size:227K _inchange_semiconductor

IRF540
IRF540

isc N-Channel Mosfet Transistor IRF540 FEATURES ·Low R DS(on) ·V Rated at ±20V GS ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC moto

0.32. irf540ns.pdf Size:2432K _kexin

IRF540
IRF540

SMD Type MOSFET N-Channel MOSFET IRF540NS (KRF540NS) TO-263 Unit:mm 9.65 (Min) 10.67 (Max) ■ Features 5.33 (Min) ● VDS (V) = 100V 90 ~ 93 ● ID = 33 A (VGS = 10V) ● RDS(ON) < 44mΩ (VGS = 10V) 6.22 (min) ● Fast Switching 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max) 1.65 (max) D 1.27~1.78 1.14~1.40 0.43~0.63 G 1 Gate 0.51~0.99 2 Drain 2.54 3 Sour

Datasheet: IRF530A , IRF530FI , IRF530N , IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , RFP50N06 , IRF540A , IRF540FI , IRF540N , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 .

 

 
Back to Top