FTK2816E Specs and Replacement

Type Designator: FTK2816E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TSSOP8

FTK2816E substitution

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FTK2816E datasheet

 ..1. Size:283K  first silicon
 ftk2816e.pdf pdf_icon

FTK2816E

SEMICONDUCTOR FTK2816E TECHNICAL DATA DESCRIPTION The FTK2816E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: FTK2306A, FTK2310, FTK2312, FTK2324, FTK2333, FTK2341E, FTK25N03PDFN33, FTK2627, AOD4184A, FTK3004D, FTK3018, FTK3022, FTK3051, FTK3134K, FTK3134KD, FTK3139K, FTK3341

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