All MOSFET. FTK2816E Datasheet

 

FTK2816E Datasheet and Replacement


   Type Designator: FTK2816E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TSSOP8
 

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FTK2816E Datasheet (PDF)

 ..1. Size:283K  first silicon
 ftk2816e.pdf pdf_icon

FTK2816E

SEMICONDUCTORFTK2816ETECHNICAL DATADESCRIPTION The FTK2816E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

Datasheet: FTK2306A , FTK2310 , FTK2312 , FTK2324 , FTK2333 , FTK2341E , FTK25N03PDFN33 , FTK2627 , HY1906P , FTK3004D , FTK3018 , FTK3022 , FTK3051 , FTK3134K , FTK3134KD , FTK3139K , FTK3341 .

History: HMS21N60F | IRFSL3107PBF | SI1013X | AON6206

Keywords - FTK2816E MOSFET datasheet

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