FTK3018 Specs and Replacement

Type Designator: FTK3018

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: SOT323

FTK3018 substitution

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FTK3018 datasheet

 ..1. Size:304K  first silicon
 ftk3018.pdf pdf_icon

FTK3018

SEMICONDUCTOR FTK3018 TECHNICAL DATA Silicon N-channel MOSFET 100mA, 30V Features 1) Low on-resistance. 3 2) Fast switching speed. 2 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 1 4) Easily designed drive circuits. 5) Easy to parallel. SOT 323 ESD>500V We declare that the material of product compliance with RoHS requirements. N ... See More ⇒

 9.1. Size:250K  first silicon
 ftk3004d.pdf pdf_icon

FTK3018

SEMICONDUCTOR FTK3004D TECHNICAL DATA DESCRIPTION The FTK3004D uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is D suitable for use as a load switch or in PWM applications. G GENERAL FEATURES S VDS = 30V,ID =55A Schematic diagram RDS(ON) ... See More ⇒

 9.2. Size:421K  first silicon
 ftk3051.pdf pdf_icon

FTK3018

SEMICONDUCTOR FTK3051 TECHNICAL DATA Main Product Characteristics D 1 6 D D VDSS -30V 2 5 D D G RDS(on) 45mohm(typ.) 3 4 G S S ID -4A SOT23-6 Marking and pin Schematic diagram A ssignment Features and Benefits Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resista... See More ⇒

 9.3. Size:315K  first silicon
 ftk3022.pdf pdf_icon

FTK3018

SEMICONDUCTOR FTK3022 TECHNICAL DATA Feathers ID =60A Advanced trench process technology BV=100V Ultra low Rdson, typical 16mohm Rdson=22mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The FTK3022 is a new generation of middle voltage and high current N Channel enhancement mode trench power FTK3022 TOP View (TO... See More ⇒

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Detailed specifications: FTK2312, FTK2324, FTK2333, FTK2341E, FTK25N03PDFN33, FTK2627, FTK2816E, FTK3004D, 60N06, FTK3022, FTK3051, FTK3134K, FTK3134KD, FTK3139K, FTK3341, FTK3400, FTK3401

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.