FTK3018 - описание и поиск аналогов

 ..1. Size:304K  first silicon
 ftk3018.pdf 

SEMICONDUCTOR FTK3018 TECHNICAL DATA Silicon N-channel MOSFET 100mA, 30V Features 1) Low on-resistance. 3 2) Fast switching speed. 2 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 1 4) Easily designed drive circuits. 5) Easy to parallel. SOT 323 ESD>500V We declare that the material of product compliance with RoHS requirements. N

 9.1. Size:250K  first silicon
 ftk3004d.pdf 

SEMICONDUCTOR FTK3004D TECHNICAL DATA DESCRIPTION The FTK3004D uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is D suitable for use as a load switch or in PWM applications. G GENERAL FEATURES S VDS = 30V,ID =55A Schematic diagram RDS(ON)

 9.2. Size:421K  first silicon
 ftk3051.pdf 

SEMICONDUCTOR FTK3051 TECHNICAL DATA Main Product Characteristics D 1 6 D D VDSS -30V 2 5 D D G RDS(on) 45mohm(typ.) 3 4 G S S ID -4A SOT23-6 Marking and pin Schematic diagram A ssignment Features and Benefits Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resista

 9.3. Size:315K  first silicon
 ftk3022.pdf 

SEMICONDUCTOR FTK3022 TECHNICAL DATA Feathers ID =60A Advanced trench process technology BV=100V Ultra low Rdson, typical 16mohm Rdson=22mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The FTK3022 is a new generation of middle voltage and high current N Channel enhancement mode trench power FTK3022 TOP View (TO