All MOSFET. FTK3341 Datasheet

 

FTK3341 Datasheet and Replacement


   Type Designator: FTK3341
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 4.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SOT23
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FTK3341 Datasheet (PDF)

 ..1. Size:393K  first silicon
 ftk3341.pdf pdf_icon

FTK3341

SEMICONDUCTOR FTK3341TECHNICAL DATADDESCRIPTION The FTK3341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -30V,ID = -4.2A RDS(ON)

 0.1. Size:377K  first silicon
 ftk3341l.pdf pdf_icon

FTK3341

SEMICONDUCTOR FTK3341TECHNICAL DATADDESCRIPTION The FTK3341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -30V,ID = -4.2A RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: STK820 | BSZ215CH | NCE60P05BY | BSO080P03NS3G | 2SK1152L | IPB60R280P6 | QM8014U

Keywords - FTK3341 MOSFET datasheet

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