All MOSFET. FTK3407L Datasheet

 

FTK3407L MOSFET. Datasheet pdf. Equivalent

Type Designator: FTK3407L

Marking Code: R7

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.8 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 4.1 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: SOT23-6L

FTK3407L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FTK3407L Datasheet (PDF)

1.1. ftk3407l.pdf Size:380K _first_silicon

FTK3407L
FTK3407L

SEMICONDUCTOR FTK3407L TECHNICAL DATA P-Channel Enhancement Mode Field Effect Transistor General Description SOT-23-6L The FTK3407L uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING: R7 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit

3.1. ftk3407.pdf Size:229K _first_silicon

FTK3407L
FTK3407L

SEMICONDUCTOR FTK3407 TECHNICAL DATA D DESCRIPTION The FTK3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D ● VDS = -30V,ID = -4.1A 3 RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 60m

 4.1. ftk3404.pdf Size:305K _first_silicon

FTK3407L
FTK3407L

SEMICONDUCTOR FTK3404 TECHNICAL DATA N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX 3 30mΩ@ 10V 30V 5.8A 2 1 42mΩ@4.5V SOT–23 1. GATE DESCRIPTION 2. SOURCE 3. DRAIN The FTK3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit able for use as a load switch or in PWM applications.The s

4.2. ftk3400.pdf Size:232K _first_silicon

FTK3407L
FTK3407L

SEMICONDUCTOR FTK3400 TECHNICAL DATA N-Channel Enhancement Mode Field Effect Transistor D FEATURE G High dense cell design for extremely low R S DS(ON) Schematic diagram Exceptional on-resistance and maximum DC current capability D 3 R0 G 1 2 S Marking and pin Assignment SOT-23 top view Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit

 4.3. ftk3401.pdf Size:236K _first_silicon

FTK3407L
FTK3407L

SEMICONDUCTOR FTK3401 TECHNICAL DATA D DESCRIPTION The FTK3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D ● VDS = -30V,ID = -4.2A 3 RDS(ON) < 90mΩ @ VGS=-2.5V RDS(ON) < 75m

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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