All MOSFET. IRF260B Datasheet

 

IRF260B MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF260B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 230 nC
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO3PB

 IRF260B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF260B Datasheet (PDF)

 ..1. Size:410K  nell
 irf260b irf260c.pdf

IRF260B IRF260B

RoHS IRF260 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET50A, 200VoltsDESCRIPTIOND The Nell IRF260 is a three-terminal silicon devicewith current conduction capability of 50A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STP20N65M5

 

 
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