IRF260B Datasheet and Replacement
Type Designator: IRF260B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 1200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO3PB
IRF260B substitution
IRF260B Datasheet (PDF)
irf260b irf260c.pdf

RoHS IRF260 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET50A, 200VoltsDESCRIPTIOND The Nell IRF260 is a three-terminal silicon devicewith current conduction capability of 50A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G
Datasheet: FTK4953 , 2SJ463A , 2SK1723 , 2SK2769-01MR , 2SK3113 , 2SK3687-01MR , 2SK3919 , 2SK4213 , IRLZ44N , IRF260C , 2N3458 , 2N3459 , 2N3460 , 2SJ599 , 2SK1657 , FMH20N60S1 , IRF630B .
History: IRFU3806 | TK6A53D | IRFH5300 | WMB060N10LGS | AUIRLR3705Z | IRFPF40 | MS23N36
Keywords - IRF260B MOSFET datasheet
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History: IRFU3806 | TK6A53D | IRFH5300 | WMB060N10LGS | AUIRLR3705Z | IRFPF40 | MS23N36



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