All MOSFET. IRF260B Datasheet

 

IRF260B Datasheet and Replacement


   Type Designator: IRF260B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO3PB
 

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IRF260B Datasheet (PDF)

 ..1. Size:410K  nell
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IRF260B

RoHS IRF260 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET50A, 200VoltsDESCRIPTIOND The Nell IRF260 is a three-terminal silicon devicewith current conduction capability of 50A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

Datasheet: FTK4953 , 2SJ463A , 2SK1723 , 2SK2769-01MR , 2SK3113 , 2SK3687-01MR , 2SK3919 , 2SK4213 , AON6380 , IRF260C , 2N3458 , 2N3459 , 2N3460 , 2SJ599 , 2SK1657 , FMH20N60S1 , IRF630B .

History: IXTP3N50P | IRF2804S-7P

Keywords - IRF260B MOSFET datasheet

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