IRF260B Specs and Replacement

Type Designator: IRF260B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO3PB

IRF260B substitution

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IRF260B datasheet

 ..1. Size:410K  nell
 irf260b irf260c.pdf pdf_icon

IRF260B

RoHS IRF260 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 50A, 200Volts DESCRIPTION D The Nell IRF260 is a three-terminal silicon device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G... See More ⇒

Detailed specifications: FTK4953, 2SJ463A, 2SK1723, 2SK2769-01MR, 2SK3113, 2SK3687-01MR, 2SK3919, 2SK4213, AON6380, IRF260C, 2N3458, 2N3459, 2N3460, 2SJ599, 2SK1657, FMH20N60S1, IRF630B

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