All MOSFET. IRF541 Datasheet

 

IRF541 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF541

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Drain Current |Id|: 28 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.077 Ohm

Package: TO220

IRF541 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF541 Datasheet (PDF)

0.1. irf540 irf541 irf542 irf543-fi.pdf Size:481K _st

IRF541
IRF541



9.1. irf540.rev3.2.pdf Size:142K _motorola

IRF541
IRF541

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Product Preview IRF540 TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET

9.2. irf540 mot.pdf Size:144K _motorola

IRF541
IRF541

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Advance Information IRF540 TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER

 9.3. irf540 s 1.pdf Size:88K _philips

IRF541
IRF541

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF540, IRF540S FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 100 V • Fast switching • Low thermal resistance ID = 23 A g RDS(ON) ≤ 77 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope us

9.4. irf540.pdf Size:53K _st

IRF541
IRF541

IRF540 IRF540FI N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI POWER MOSFET TYPE VDSS RDS(on) ID IRF540 100 V < 0.077 Ω 30 A IRF540FI 100 V < 0.077 Ω 16 A TYPICAL R = 0.050 Ω DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 3 HIGH CURRENT CAPABILITY 2 2 175oC OPERATING TEMPERATURE 1 1 APPLICATION ORI

 9.5. irf540a.pdf Size:256K _fairchild_semi

IRF541
IRF541

IRF540A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area TO-220 Ο 175 C Operating Temperature µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V Ω Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Sour

9.6. irf540 rf1s540sm.pdf Size:112K _fairchild_semi

IRF541
IRF541

IRF540, RF1S540SM Data Sheet January 2002 28A, 100V, 0.077 Ohm, N-Channel Power Features MOSFETs • 28A, 100V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.077Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala

9.7. irf540.pdf Size:146K _fairchild_semi

IRF541
IRF541



9.8. irf540zlpbf irf540zspbf.pdf Size:376K _international_rectifier

IRF541
IRF541

PD - 95531A IRF540ZPbF IRF540ZSPbF IRF540ZLPbF Features HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 26.5mΩ G Lead-Free ID = 36A Description S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremel

9.9. irf540n.pdf Size:99K _international_rectifier

IRF541
IRF541

PD - 91341B IRF540N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 44mΩ G Fast Switching Fully Avalanche Rated ID = 33A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan

9.10. irf540zpbf.pdf Size:302K _international_rectifier

IRF541
IRF541

PD - 94758 IRF540Z AUTOMOTIVE MOSFET IRF540ZS IRF540ZL Features HEXFET® Power MOSFET ● Advanced Process Technology D ● Ultra Low On-Resistance VDSS = 100V ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax RDS(on) = 26.5mΩ G Description ID = 36A Specifically designed for Automotive applications, S this HEXFET® Power MOSFE

9.11. irf540npbf.pdf Size:153K _international_rectifier

IRF541
IRF541

PD - 94812 IRF540NPbF HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 44mΩ Fast Switching G Fully Avalanche Rated ID = 33A Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

9.12. auirf540zstrl.pdf Size:326K _international_rectifier

IRF541
IRF541

PD - 96326 AUTOMOTIVE GRADE AUIRF540Z AUIRF540ZS Features HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance V(BR)DSS 100V l 175°C Operating Temperature RDS(on) typ. 21mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 26.5mΩ l Lead-Free, RoHS Compliant ID 36A l Automotive Qualified * S Description Specifically designe

9.13. irf540pbf.pdf Size:1312K _international_rectifier

IRF541
IRF541

PD - 94848 IRF540PbF • Lead-Free 11/17/03 Document Number: 91021 www.vishay.com 1 IRF540PbF Document Number: 91021 www.vishay.com 2 IRF540PbF Document Number: 91021 www.vishay.com 3 IRF540PbF Document Number: 91021 www.vishay.com 4 IRF540PbF Document Number: 91021 www.vishay.com 5 IRF540PbF Document Number: 91021 www.vishay.com 6 IRF540PbF TO-220AB Package Outline

9.14. irf540spbf.pdf Size:1411K _international_rectifier

IRF541
IRF541

PD- 95983 IRF540SPbF • Lead-Free 12/21/04 Document Number: 91022 www.vishay.com 1 IRF540SPbF Document Number: 91022 www.vishay.com 2 IRF540SPbF Document Number: 91022 www.vishay.com 3 IRF540SPbF Document Number: 91022 www.vishay.com 4 IRF540SPbF Document Number: 91022 www.vishay.com 5 IRF540SPbF Document Number: 91022 www.vishay.com 6 IRF540SPbF Peak Diode Recovery

9.15. irf540s.pdf Size:184K _international_rectifier

IRF541
IRF541



9.16. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

IRF541
IRF541

PD - 95130 IRF540NSPbF IRF540NLPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 44mΩ l Lead-Free G Description Advanced HEXFET Power MOSFETs from ID = 33A International Rectifier utilize advanced processing S techniques to achi

9.17. irf540s irf540spbf.pdf Size:196K _international_rectifier

IRF541
IRF541

IRF540S, SiHF540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Surface Mount RDS(on) ()VGS = 10 V 0.077 • Available in Tape and Reel Qg (Max.) (nC) 72 • Dynamic dV/dt Rating Qgs (nC) 11 • Repetitive Avalanche Rated Qgd (nC) 32 • 175 °C Operating Temperature Configuration Single • Fa

9.18. irf540z.pdf Size:173K _international_rectifier

IRF541
IRF541

PD - 94644 IRF540Z AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 29.5mΩ 175°C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 34A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t

9.19. irf540ns.pdf Size:125K _international_rectifier

IRF541
IRF541

PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44mΩ Description G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-r

9.20. irf540.pdf Size:177K _international_rectifier

IRF541
IRF541



9.21. irf540a.pdf Size:951K _samsung

IRF541
IRF541

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area Ο 175 Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Ω Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximu

9.22. irf540 sihf540.pdf Size:202K _vishay

IRF541
IRF541

IRF540, SiHF540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 0.077 RoHS* • 175 °C Operating Temperature Qg (Max.) (nC) 72 COMPLIANT • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 32 • Simple Drive Requirements Configuration Single • Complian

9.23. irf540ns.pdf Size:2432K _kexin

IRF541
IRF541

SMD Type MOSFET N-Channel MOSFET IRF540NS (KRF540NS) TO-263 Unit:mm 9.65 (Min) 10.67 (Max) ■ Features 5.33 (Min) ● VDS (V) = 100V 90 ~ 93 ● ID = 33 A (VGS = 10V) ● RDS(ON) < 44mΩ (VGS = 10V) 6.22 (min) ● Fast Switching 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max) 1.65 (max) D 1.27~1.78 1.14~1.40 0.43~0.63 G 1 Gate 0.51~0.99 2 Drain 2.54 3 Sour

Datasheet: IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , IRF540N , IRF540NL , IRF540NS , 2N5484 , IRF542 , IRF543 , IRF550A , IRF610 , IRF610A , IRF610S , IRF611 , IRF612 .

 

 
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