All MOSFET. WNMD2166 Datasheet

 

WNMD2166 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WNMD2166
   Marking Code: 2166
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SOT23-6L

 WNMD2166 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WNMD2166 Datasheet (PDF)

 ..1. Size:1188K  willsemi
 wnmd2166.pdf

WNMD2166 WNMD2166

WNMD2166WNMD2166Dual N-Channel, 20V, 4.0A, Power MOSFET Http//:www.willsemi.comVDS (V) Rds(on) () 0.022@ V =4.5V GS0.023@ V =3.7V GS20 0.024@ VGS=3.1V 0.027@ V =2.5V GSPackageDescriptionsG1 D1/D2 G26 5 4The WNMD2166 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

 7.1. Size:1072K  willsemi
 wnmd2168.pdf

WNMD2166 WNMD2166

WNMD2168 WNMD2168 Dual N-Channel, 20V, 4.1A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) () 0.022@ VGS=4.5V 20 0.024@ VGS=3.1V 0.027@ VGS=2.5V Descriptions TSSOP-8LD1/D2 S2 S2 G28 7 6 5The WNMD2168 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device

 7.2. Size:1228K  willsemi
 wnmd2167.pdf

WNMD2166 WNMD2166

WNMD2167 WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET Http//:www.willsemi.com VDS (V) Typical Rds(on) () 0.016@ V =4.5V GS 0.0175@ V =3.8V GS20 0.018@ VGS=3.1V 0.020@ V =2.5V GSSOT-23-6L Descriptions G1 D1/D2 G25 46The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON

 7.3. Size:1757K  willsemi
 wnmd2165.pdf

WNMD2166 WNMD2166

WNMD2165 WNMD2165 Dual N-Channel, 60V, 0.32A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions SOT-363 The WNMD2165 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced D1 G2 S2trench technology and design to provide excellent 6 5 4RDS (ON) with low gate charge. This

 7.4. Size:2755K  willsemi
 wnmd2162.pdf

WNMD2166 WNMD2166

WNMD2162 WNMD2162 Dual N-Channel, 20V, 4.8A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) 14 @ VGS= 4.5V 14.5 @ VGS= 3.8V 20 15 @ VGS= 3.1V 16 @ VGS= 2.5V PDFN2.92.8-8L ESD protected D2 D1 D1 D2 Descriptions 5 8 7 6 The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to pro

 7.5. Size:471K  willsemi
 wnmd2160.pdf

WNMD2166 WNMD2166

WNMD2160WNMD2160Dual N-Channel, 20V, 6.3A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.0157@ VGS=4.5V0.018@ VGS=3.1V200.020@ VGS=2.5VESD Rating: 2000V HBM SOT-23-6L DescriptionsThe WNMD2160 is N-Channel enhancement G1 D1/D2 G2MOS Field Effect Transistor. Uses advanced trench 6 5 4technology and design to provide excellent RDS (ON)with low gate cha

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK1629-E1-E

 

 
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