WPM1480
MOSFET. Datasheet pdf. Equivalent
Type Designator: WPM1480
Marking Code: TS
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.29
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 1.4
A
Qgⓘ - Total Gate Charge: 6.5
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.255
Ohm
Package:
SOT323
WPM1480
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WPM1480
Datasheet (PDF)
..1. Size:502K willsemi
wpm1480.pdf 
WPM1480 WPM1480 Http://www.sh-willsemi.com Single P-Channel, -20 V, -1.5 A,Power Mosfet Description 3The WPM1480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is 1suitable for use in DC-DC conversion applications. Standard 2Product WPM1480 is Pb-free. SC-70/SOT-323Features V R Typ (BR)DSS DS(on) 20
8.1. Size:1149K willsemi
wpm1485.pdf
WPM1485 WPM1485 Single P-Channel, -12V, -7.4A, Power MOSFET Http//:www.willsemi.com V (V) Rds(on) () DS 0.016@ V =-4.5VGS -12 0.022@ V =-2.5VGS 0.032@ V =-1.8VGS DFN22-6L Descriptions D D S 6 5 4 The WPM1485 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent RDS (ON) S with low
8.2. Size:817K willsemi
wpm1483.pdf
WPM1483WPM1483Single P-Channel, -12V, -3.5A, Power MOSFET Http//:www.sh-willsemi.comVDS (V) Typical Rds(on) ()0.031@ VGS=4.5V-12 0.040@ VGS=2.5V0.056@ VGS=1.8VSOT-23DescriptionsThe WPM1483 is P-Channel enhancementMOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON)with low gate charge. This device is suitable f
8.3. Size:1057K willsemi
wpm1481.pdf
WPM1481 WPM1481 Single P-Channel, -12V, -5.1A, Power MOSFET Http://www.sh-willsemi.com V (V) Typical Rds(on) () I (A)DS D 0.024@ V = - 4.5V -5.5 GS -12 0.032@ V = - 2.5V -4.0 GS 0.047@ V = - 1.8V -2.5 GS DFN2*2-6L Descriptions D D S 6 5 4 The WPM1481 is P-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provi
8.4. Size:635K willsemi
wpm1488.pdf
WPM1488WPM1488Single P-Channel, -12V, -1.4A, Power MOSFET www.sh-willsemi.comVDS (V) Typical Rds(on) () ID (A) 0.080@ VGS=4.5V -1.2 -12 0.086@ VGS=3.6V -1.0 0.105@ VGS=2.5V -1.0 SOT-323DescriptionsThe WPM1488 is P-Channel enhancementMOS Field Effect Transistor. Uses advancedtrench technology and design to provide excellentRDS (ON) with low gate charge. This de
Datasheet: WNMD2172
, WNMD2173
, WNMD2174
, WNMD2176
, WNMD2178
, WNMD2179
, WNMD3014
, WNMD6003
, 10N60
, WPM1481
, WPM1483
, WPM1485
, WPM1488
, WPM2005B
, WPM2006
, WPM2009D
, WPM2014
.
