WPM1480 - описание и поиск аналогов

WPM1480 WPM1480 Http //www.sh-willsemi.com Single P-Channel, -20 V, -1.5 A,Power Mosfet Description 3 The WPM1480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is 1 suitable for use in DC-DC conversion applications. Standard 2 Product WPM1480 is Pb-free. SC-70/SOT-323 Features V R Typ (BR)DSS DS(on) 20

WPM1485 WPM1485 Single P-Channel, -12V, -7.4A, Power MOSFET Http// www.willsemi.com V (V) Rds(on) ( ) DS 0.016@ V =-4.5V GS -12 0.022@ V =-2.5V GS 0.032@ V =-1.8V GS DFN2 2-6L Descriptions D D S 6 5 4 The WPM1485 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent R DS (ON) S with low

WPM1483 WPM1483 Single P-Channel, -12V, -3.5A, Power MOSFET Http// www. sh-willsemi.com VDS (V) Typical Rds(on) ( ) 0.031@ VGS= 4.5V -12 0.040@ VGS= 2.5V 0.056@ VGS= 1.8V SOT-23 Descriptions The WPM1483 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable f

WPM1481 WPM1481 Single P-Channel, -12V, -5.1A, Power MOSFET Http //www.sh-willsemi.com V (V) Typical Rds(on) ( ) I (A) DS D 0.024@ V = - 4.5V -5.5 GS -12 0.032@ V = - 2.5V -4.0 GS 0.047@ V = - 1.8V -2.5 GS DFN2*2-6L Descriptions D D S 6 5 4 The WPM1481 is P-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provi

WPM1488 WPM1488 Single P-Channel, -12V, -1.4A, Power MOSFET www.sh-willsemi.com VDS (V) Typical Rds(on) ( ) ID (A) 0.080@ VGS= 4.5V -1.2 -12 0.086@ VGS= 3.6V -1.0 0.105@ VGS= 2.5V -1.0 SOT-323 Descriptions The WPM1488 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This de