IRF611 MOSFET: N-Ch, 150V, 2.5A. Full specification with pinout and replacement list

IRF611 Specs and Replacement

   Type Designator: IRF611
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25(max) nS
   Cossⓘ - Output Capacitance: 80(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220AB

IRF611 substitution

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IRF611 Specs

..1. Size:107K 1
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9.1. Size:295K 1
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9.2. Size:178K international rectifier
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9.3. Size:134K international rectifier
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IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Fast Switching Qg (Max.) (nC) 8.2 COMPLIANT Ease of Paralleling Qgs (nC) 1.8 Simple Drive Requirements Qgd (nC) 4.5 Configuration Single Compliant to RoHS Directive 2002/95/EC D D... See More ⇒

9.4. Size:174K international rectifier
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9.5. Size:51K international rectifier
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PD - 93943 PROVISIONAL IRF6150 HEXFET Power MOSFET Ultra Low RSS(on) per Footprint Area VSS RSS(on) max IS Low Thermal Resistance -20V 0.036 @VGS1,2 = -4.5V -7.9A Bi-Directional P-Channel Switch 0.052 @VGS1,2 = -2.5V -6.3A Super Low Profile (... See More ⇒

9.6. Size:174K international rectifier
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9.7. Size:919K international rectifier
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PD - 94849 IRF614PbF Lead-Free 11/25/06 Document Number 91025 www.vishay.com 1 IRF614PbF Document Number 91025 www.vishay.com 2 IRF614PbF Document Number 91025 www.vishay.com 3 IRF614PbF Document Number 91025 www.vishay.com 4 IRF614PbF Document Number 91025 www.vishay.com 5 IRF614PbF Document Number 91025 www.vishay.com 6 IRF614PbF TO-220AB Package Outline ... See More ⇒

9.8. Size:202K international rectifier
irf610pbf.pdf pdf_icon

IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* Fast Switching Qg (Max.) (nC) 8.2 COMPLIANT Ease of Paralleling Qgs (nC) 1.8 Qgd (nC) 4.5 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D ... See More ⇒

9.9. Size:618K international rectifier
irf6100pbf.pdf pdf_icon

PD - 96012B IRF6100PbF HEXFET Power MOSFET l Ultra Low RDS(on) per Footprint Area VDSS RDS(on) max ID l Low Thermal Resistance -20V 0.065 @VGS = -4.5V -5.1A l P-Channel MOSFET 0.095 @VGS = -2.5V -4.1A l One-third Footprint of SOT-23 l Super Low Profile (... See More ⇒

9.10. Size:199K international rectifier
irf610spbf.pdf pdf_icon

IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 1.5 Available in Tape and Reel Qg (Max.) (nC) 8.2 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Simple Drive R... See More ⇒

9.11. Size:636K international rectifier
irf6100.pdf pdf_icon

PD - 93930F IRF6100 HEXFET Power MOSFET l Ultra Low RDS(on) per Footprint Area VDSS RDS(on) max ID l Low Thermal Resistance -20V 0.065 @VGS = -4.5V -5.1A l P-Channel MOSFET 0.095 @VGS = -2.5V -4.1A l One-third Footprint of SOT-23 l Super Low Profile (... See More ⇒

9.12. Size:173K international rectifier
irf610l irf610lpbf.pdf pdf_icon

IRF610S, SiHF610S, IRF610L, SiHF610L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount VDS (V) 200 Available in tape and reel RDS(on) ( )VGS = 10 V 1.5 Dynamic dV/dt rating Available Qg (Max.) (nC) 8.2 Repetitive avalanche rated Qgs (nC) 1.8 Fast switching Available Qgd (nC) 4.5 Ease of paralleling Configuration Sing... See More ⇒

9.13. Size:197K international rectifier
irf614spbf.pdf pdf_icon

IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition Surface Mount RDS(on) ( )VGS = 10 V 2.0 Available in Tape and Reel Qg (Max.) (nC) 8.2 Dynamic dV/dt Rating Qgs (nC) 1.8 Repetitive Avalanche Rated Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Sin... See More ⇒

9.14. Size:866K fairchild semi
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IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to Fast switch... See More ⇒

9.15. Size:855K fairchild semi
irf614b.pdf pdf_icon

November 2001 IRF614B/IRFS614B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.1 nC) planar, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to ... See More ⇒

9.16. Size:148K fairchild semi
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9.17. Size:930K samsung
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Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 1.169 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒

9.18. Size:945K samsung
irf614a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 10 (Max.) @ VDS = 250V Lower RDS(ON) 1.393 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic ... See More ⇒

9.19. Size:202K vishay
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9.20. Size:175K vishay
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9.21. Size:133K vishay
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9.22. Size:2973K cn vbsemi
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IRF610P www.VBsemi.tw N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) 200 TrenchFET Power MOSFET RDS(on) ( )VGS = 10 V 0.85 175 C Junction Temperature Qg (Max.) (nC) 13 PWM Optimized 100 % Rg Tested Qgs (nC) 3.0 Compliant to RoHS Directive 2002/95/EC Qgd (nC) 7.9 Configuration Single APPLICATIONS Primary Side Switch TO-220AB D G G... See More ⇒

Detailed specifications: IRF540NS , IRF541 , IRF542 , IRF543 , IRF550A , IRF610 , IRF610A , IRF610S , 2N7002 , IRF612 , IRF613 , IRF614 , IRF614A , IRF614S , IRF615 , IRF620 , IRF620A .