IRF612 Datasheet and Replacement

   Type Designator: IRF612
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25(max) nS
   Cossⓘ - Output Capacitance: 80(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO220AB

IRF612 substitution

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IRF612 Datasheet (PDF)

..1. Size:107K 1
irf610 irf611 irf612 irf613 mtp2n18 mtp2n20.pdf pdf_icon

9.1. Size:295K 1
irf614 irf615.pdf pdf_icon

9.2. Size:178K international rectifier
irf610s.pdf pdf_icon

9.3. Size:134K international rectifier
irf614pbf.pdf pdf_icon

IRF614, SiHF614Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Fast SwitchingQg (Max.) (nC) 8.2 COMPLIANT Ease of ParallelingQgs (nC) 1.8 Simple Drive RequirementsQgd (nC) 4.5Configuration Single Compliant to RoHS Directive 2002/95/ECDD

9.4. Size:174K international rectifier
irf614s.pdf pdf_icon

9.5. Size:51K international rectifier
irf6150.pdf pdf_icon

PD - 93943PROVISIONALIRF6150HEXFET Power MOSFET Ultra Low RSS(on) per Footprint AreaVSS RSS(on) max IS Low Thermal Resistance-20V 0.036@VGS1,2 = -4.5V -7.9A Bi-Directional P-Channel Switch0.052@VGS1,2 = -2.5V -6.3A Super Low Profile (

9.6. Size:174K international rectifier
irf610.pdf pdf_icon

9.7. Size:919K international rectifier
irf614.pdf pdf_icon

PD - 94849IRF614PbF Lead-Free11/25/06Document Number: 91025 www.vishay.com1IRF614PbFDocument Number: 91025 www.vishay.com2IRF614PbFDocument Number: 91025 www.vishay.com3IRF614PbFDocument Number: 91025 www.vishay.com4IRF614PbFDocument Number: 91025 www.vishay.com5IRF614PbFDocument Number: 91025 www.vishay.com6IRF614PbFTO-220AB Package Outline

9.8. Size:202K international rectifier
irf610pbf.pdf pdf_icon

IRF610, SiHF610Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 8.2COMPLIANT Ease of ParallelingQgs (nC) 1.8Qgd (nC) 4.5 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

9.9. Size:618K international rectifier
irf6100pbf.pdf pdf_icon

PD - 96012BIRF6100PbFHEXFET Power MOSFETl Ultra Low RDS(on) per Footprint AreaVDSS RDS(on) max IDl Low Thermal Resistance-20V 0.065@VGS = -4.5V -5.1Al P-Channel MOSFET0.095@VGS = -2.5V -4.1Al One-third Footprint of SOT-23l Super Low Profile (

9.10. Size:199K international rectifier
irf610spbf.pdf pdf_icon

IRF610S, SiHF610SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 1.5 Available in Tape and ReelQg (Max.) (nC) 8.2 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of Paralleling Simple Drive R

9.11. Size:636K international rectifier
irf6100.pdf pdf_icon

PD - 93930FIRF6100HEXFET Power MOSFETl Ultra Low RDS(on) per Footprint AreaVDSS RDS(on) max IDl Low Thermal Resistance-20V 0.065@VGS = -4.5V -5.1Al P-Channel MOSFET0.095@VGS = -2.5V -4.1Al One-third Footprint of SOT-23l Super Low Profile (

9.12. Size:173K international rectifier
irf610l irf610lpbf.pdf pdf_icon

IRF610S, SiHF610S, IRF610L, SiHF610Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 200 Available in tape and reelRDS(on) ()VGS = 10 V 1.5 Dynamic dV/dt ratingAvailableQg (Max.) (nC) 8.2 Repetitive avalanche ratedQgs (nC) 1.8 Fast switchingAvailableQgd (nC) 4.5 Ease of parallelingConfiguration Sing

9.13. Size:197K international rectifier
irf614spbf.pdf pdf_icon

IRF614S, SiHF614SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 250 Definition Surface MountRDS(on) ()VGS = 10 V 2.0 Available in Tape and Reel Qg (Max.) (nC) 8.2 Dynamic dV/dt RatingQgs (nC) 1.8 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Sin

9.14. Size:866K fairchild semi
irf610b.pdf pdf_icon

IRF610B/IRFS610B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored to Fast switch

9.15. Size:855K fairchild semi
irf614b.pdf pdf_icon

November 2001IRF614B/IRFS614B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC)planar, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored to

9.16. Size:148K fairchild semi
irf610.pdf pdf_icon

9.17. Size:930K samsung
irf610a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 1.169 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

9.18. Size:945K samsung
irf614a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.8 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 10 (Max.) @ VDS = 250V Lower RDS(ON) : 1.393 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

9.19. Size:202K vishay
irf610 sihf610.pdf pdf_icon

9.20. Size:175K vishay
irf610s sihf610s irf610l sihf610l.pdf pdf_icon

9.21. Size:133K vishay
irf614 sihf614.pdf pdf_icon

9.22. Size:2973K cn vbsemi
irf610p.pdf pdf_icon

IRF610Pwww.VBsemi.twN-Channel 200 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) 200 TrenchFET Power MOSFETRDS(on) ()VGS = 10 V 0.85 175 C Junction TemperatureQg (Max.) (nC) 13 PWM Optimized 100 % Rg TestedQgs (nC) 3.0 Compliant to RoHS Directive 2002/95/ECQgd (nC) 7.9Configuration SingleAPPLICATIONS Primary Side SwitchTO-220AB DGG

Datasheet: IRF541 , IRF542 , IRF543 , IRF550A , IRF610 , IRF610A , IRF610S , IRF611 , IRF4905 , IRF613 , IRF614 , IRF614A , IRF614S , IRF615 , IRF620 , IRF620A , IRF620FI .