WPM3005 MOSFET Datasheet: P-Ch, 30V, 3.4A. Full specification with pinout and replacement list

WPM3005 Specs and Replacement

Type Designator: WPM3005

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SOT23-3L

WPM3005 substitution

- MOSFET ⓘ Cross-Reference Search

WPM3005 datasheet

..1. Size:920K willsemi
wpm3005.pdf pdf_icon

WPM3005 WPM3005 Single P-Channel, -30V, -4.1A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.057@ VGS= 10.0V 0.057@ VGS= 10.0V -30 0.083@ VGS= 4.5V 0.083@ VGS= 4.5V SOT-23-3L Descriptions D 3 The WPM3005 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This devi... See More ⇒

..2. Size:293K tysemi
wpm3005.pdf pdf_icon

Product specification WPM3005 Single P-Channel, -30V, -4.1A, Power MOSFET VDS (V) Rds(on) ( ) 0.057@ VGS= 10.0V 0.057@ VGS= 10.0V -30 0.083@ VGS= 4.5V 0.083@ VGS= 4.5V SOT-23-3L Descriptions D 3 The WPM3005 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitab... See More ⇒

8.1. Size:810K willsemi
wpm3004.pdf pdf_icon

WPM3004 WPM3004 Single P-Channel, -30V, -5.0A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.053@ VGS= 10.0V 0.053@ VGS= 10.0V -30 0.079@ VGS= 4.5V 0.079@ VGS= 4.5V SOP-8L Descriptions D D D D The WPM3004 is P-Channel enhancement MOS 8 7 6 5 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gat... See More ⇒

9.1. Size:514K willsemi
wpm3012.pdf pdf_icon

WPM3012 WPM3012 Http //www.sh-willsemi.com Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) Rds(on) ( ) 0.058@ VGS= 10V -30 0.080@ VGS= 4.5V SOT-23 Descriptions D 3 The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) 1 2 with low gate charge. This device is suitable for use GS in D... See More ⇒