Справочник MOSFET. WPM3005

 

WPM3005 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WPM3005
   Маркировка: W35*
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 14 nC
   trⓘ - Время нарастания: 3.2 ns
   Cossⓘ - Выходная емкость: 75 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: SOT23-3L

 Аналог (замена) для WPM3005

 

 

WPM3005 Datasheet (PDF)

 ..1. Size:920K  willsemi
 wpm3005.pdf

WPM3005 WPM3005

WPM3005WPM3005Single P-Channel, -30V, -4.1A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.057@ VGS= 10.0V0.057@ VGS= 10.0V-300.083@ VGS= 4.5V0.083@ VGS= 4.5VSOT-23-3L DescriptionsD3The WPM3005 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This devi

 ..2. Size:293K  tysemi
 wpm3005.pdf

WPM3005 WPM3005

Product specificationWPM3005Single P-Channel, -30V, -4.1A, Power MOSFET VDS (V) Rds(on) ( )0.057@ VGS= 10.0V0.057@ VGS= 10.0V-300.083@ VGS= 4.5V0.083@ VGS= 4.5VSOT-23-3L DescriptionsD3The WPM3005 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitab

 8.1. Size:810K  willsemi
 wpm3004.pdf

WPM3005 WPM3005

WPM3004 WPM3004 Single P-Channel, -30V, -5.0A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.053@ VGS= 10.0V 0.053@ VGS= 10.0V -30 0.079@ VGS= 4.5V 0.079@ VGS= 4.5V SOP-8L Descriptions D D DDThe WPM3004 is P-Channel enhancement MOS 8 7 6 5Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gat

 9.1. Size:514K  willsemi
 wpm3012.pdf

WPM3005 WPM3005

WPM3012WPM3012Http://www.sh-willsemi.com Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) Rds(on) ( )0.058@ VGS= 10V-300.080@ VGS= 4.5VSOT-23 DescriptionsD3The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) 1 2with low gate charge. This device is suitable for use GSin D

 9.2. Size:508K  willsemi
 wpm3021.pdf

WPM3005 WPM3005

WPM3021 WPM3021 Single P-Channel, -30V, -13A, Power MOSFET Http://www.sh-willsemi.com V (V) Typical R (m) DS DS(on)11@ V =-10V GS-30 15 @ V =-5V GS (4) (3) (2) Descriptions (1) The WPM3021 is P-Channel enhancement MOS SOP-8L Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON) D D D D with low gate charge. Th

 9.3. Size:1838K  willsemi
 wpm3020.pdf

WPM3005 WPM3005

WPM3020 WPM3020 Single P-Channel, -30V, -3.8A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) DD43 @ VGS=-10V -30 SS48 @ VGS=-4.5V GGSOT-23 Descriptions D The WPM3020 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is s

 9.4. Size:1172K  willsemi
 wpm3022.pdf

WPM3005 WPM3005

WPM3022 WPM3022 Single P-Channel, -30V, -3.1A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) DD56 @ VGS=-10V -30 SS77 @ VGS=-4.5V GGSOT-23 Descriptions D The WPM3022 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is s

 9.5. Size:84K  tysemi
 wpm3012.pdf

WPM3005 WPM3005

Product specificationWPM3012Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) Rds(on) ( )0.058@ VGS= 10V-300.080@ VGS= 4.5VSOT-23 DescriptionsD3The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use 1 2in DC-DC conversion, pow

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