WPM9435 Datasheet and Replacement
Type Designator: WPM9435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
Package: SOP8P
WPM9435 substitution
WPM9435 Datasheet (PDF)
wpm9435.pdf

WPM9435WPM9435 P-Channel Enhancement Mode MOSFET www.willsemi.comDescription The WPM9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteb
Datasheet: WPM3004 , WPM3005 , WPM3012 , WPM3401 , WPM3407 , WPM4801 , WPM4803 , WPM5001 , IRF9540N , WPMD2008 , WPMD2010 , WPMD2011 , WPMD2012 , WPMD2013 , WPMD3002 , BSR202N , BSR302N .
History: SSD30N06-39D | SSD3055 | WSF3087 | IRFB38N20DPBF | NCEP048N72 | MTB110P10E3 | MTB20P03L3
Keywords - WPM9435 MOSFET datasheet
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History: SSD30N06-39D | SSD3055 | WSF3087 | IRFB38N20DPBF | NCEP048N72 | MTB110P10E3 | MTB20P03L3



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