MGSF1N02LT1G Specs and Replacement
Type Designator: MGSF1N02LT1G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOT23
MGSF1N02LT1G substitution
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MGSF1N02LT1G datasheet
mgsf1n02lt1rev2.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGSF1N02LT1/D MGSF1N02LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel N CHANNEL ENHANCEMENT MODE Field Effect Transistors TMOS MOSFET Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorola ... See More ⇒
mgsf1n02lt1-d.pdf
MGSF1N02LT1 Preferred Device Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23 These miniature surface mount MOSFETs low RDS(on) assure http //onsemi.com minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical 750 mAMPS, 20 VOLTS applications are dc-dc converters and power management in portable RDS(on) = 90 mW... See More ⇒
mgsf1n02lt1.pdf
Product specification MGSF1N02LT1 Power MOSFET 750 mAMPS 750 mAmps, 20 Volts 20 VOLTS RDS(on) = 90 mW N Channel SOT 23 These miniature surface mount MOSFETs low RDS(on) assure N Channel minimal power loss and conserve energy, making these devices ideal 3 for use in space sensitive power management circuitry. Typical applications are dc dc converters and power management in p... See More ⇒
Detailed specifications: BSS316N, BSS806N, DMG2307L, DMG3401LSN, DMG3407SSN, DMN2041L, DMN3110S, DMP1045U, 2SK3568, MGSF1N03LT1G, MGSF2N02ELT1G, NTR1P02LT1G, PMV170UN, PMV185XN, PMV33UPE, PMV50UPE, PMV65UN
Keywords - MGSF1N02LT1G MOSFET specs
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