All MOSFET. MGSF2N02ELT1G Datasheet

 

MGSF2N02ELT1G MOSFET. Datasheet pdf. Equivalent

Type Designator: MGSF2N02ELT1G

SMD Transistor Code: NT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 2.8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 95 nS

Drain-Source Capacitance (Cd): 130 pF

Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm

Package: SOT23

MGSF2N02ELT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MGSF2N02ELT1G Datasheet (PDF)

1.1. mgsf2n02el-d.pdf Size:54K _onsemi

MGSF2N02ELT1G
MGSF2N02ELT1G

MGSF2N02EL Preferred Device Power MOSFET 2.8 Amps, 20 Volts, N-Channel SOT-23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. http://onsemi.com Features 2.8 A, 20 V Pb-Free Packages are Available RDS(on) = 85 mW (max) Low RDS(on) Provides Higher Efficie

1.2. mgsf2n02el.pdf Size:89K _tysemi

MGSF2N02ELT1G
MGSF2N02ELT1G

Product specification MGSF2N02EL Power MOSFET 2.8 A, 20 V 2.8 Amps, 20 Volts, N-Channel SOT-23 RDS(on) = 85 mW (max) These miniature surface mount MOSFETs low RDS(on) assure N-Channel minimal power loss and conserve energy, making these devices ideal D for use in space sensitive power management circuitry. Features • Pb-Free Packages are Available • Low RDS(on) Provides Higher

 

 

 

 

Datasheet: DMG2307L , DMG3401LSN , DMG3407SSN , DMN2041L , DMN3110S , DMP1045U , MGSF1N02LT1G , MGSF1N03LT1G , IRF5210 , NTR1P02LT1G , PMV170UN , PMV185XN , PMV33UPE , PMV50UPE , PMV65UN , PMV90EN , QM3001K .

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