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PMV170UN Specs and Replacement

Type Designator: PMV170UN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.325 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm

Package: SOT23

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PMV170UN datasheet

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 pmv170un.pdf pdf_icon

PMV170UN

Product specification PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Very fast switching ... See More ⇒

Detailed specifications: DMG3407SSN, DMN2041L, DMN3110S, DMP1045U, MGSF1N02LT1G, MGSF1N03LT1G, MGSF2N02ELT1G, NTR1P02LT1G, SI2302, PMV185XN, PMV33UPE, PMV50UPE, PMV65UN, PMV90EN, QM3001K, QM3007K, WNM2023

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