All MOSFET. PMV170UN Datasheet

 

PMV170UN Datasheet and Replacement


   Type Designator: PMV170UN
   Marking Code: EG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.325 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: SOT23
 

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PMV170UN Datasheet (PDF)

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PMV170UN

Product specificationPMV170UN20 V, single N-channel Trench MOSFET3 August 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Low threshold voltage Very fast switching

Datasheet: DMG3407SSN , DMN2041L , DMN3110S , DMP1045U , MGSF1N02LT1G , MGSF1N03LT1G , MGSF2N02ELT1G , NTR1P02LT1G , IRFZ46N , PMV185XN , PMV33UPE , PMV50UPE , PMV65UN , PMV90EN , QM3001K , QM3007K , WNM2023 .

History: FCPF850N80Z

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