All MOSFET. PMV50UPE Datasheet

 

PMV50UPE MOSFET. Datasheet pdf. Equivalent

Type Designator: PMV50UPE

SMD Transistor Code: CZ

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.5 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 0.9 V

Maximum Drain Current |Id|: 3.7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 700 nS

Drain-Source Capacitance (Cd): 106 pF

Maximum Drain-Source On-State Resistance (Rds): 0.066 Ohm

Package: SOT23

PMV50UPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV50UPE Datasheet (PDF)

1.1. pmv50upe.pdf Size:361K _tysemi

PMV50UPE
PMV50UPE

Product specification PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • 3 kV ESD protected • Trench MOSFET technology

Datasheet: DMP1045U , MGSF1N02LT1G , MGSF1N03LT1G , MGSF2N02ELT1G , NTR1P02LT1G , PMV170UN , PMV185XN , PMV33UPE , IRF9640 , PMV65UN , PMV90EN , QM3001K , QM3007K , WNM2023 , WNM2025 , WNM2027 , WNM2034 .

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