PMV50UPE MOSFET Datasheet: P-Ch, 20V, 3.7A. Full specification with pinout and replacement list

PMV50UPE Specs and Replacement

Type Designator: PMV50UPE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 700 nS

Cossⓘ - Output Capacitance: 106 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm

Package: SOT23

PMV50UPE substitution

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PMV50UPE datasheet

..1. Size:721K nxp
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PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 3 kV ESD protected Trench MOSFET technology Low threshold voltage... See More ⇒

..2. Size:361K tysemi
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9.1. Size:251K nxp
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PMV50XP 20 V, P-channel Trench MOSFET 19 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power ... See More ⇒

Detailed specifications: DMP1045U, MGSF1N02LT1G, MGSF1N03LT1G, MGSF2N02ELT1G, NTR1P02LT1G, PMV170UN, PMV185XN, PMV33UPE, 20N50, PMV65UN, PMV90EN, QM3001K, QM3007K, WNM2023, WNM2025, WNM2027, WNM2034