PMV50UPE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMV50UPE
SMD Transistor Code: CZ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.5 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 0.9 V
Maximum Drain Current |Id|: 3.7 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 700 nS
Drain-Source Capacitance (Cd): 106 pF
Maximum Drain-Source On-State Resistance (Rds): 0.066 Ohm
Package: SOT23
PMV50UPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV50UPE Datasheet (PDF)
1.1. pmv50upe.pdf 
Size:361K _tysemi
Product specification PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • 3 kV ESD protected • Trench MOSFET technology â€
Datasheet: DMP1045U , MGSF1N02LT1G , MGSF1N03LT1G , MGSF2N02ELT1G , NTR1P02LT1G , PMV170UN , PMV185XN , PMV33UPE , IRF9640 , PMV65UN , PMV90EN , QM3001K , QM3007K , WNM2023 , WNM2025 , WNM2027 , WNM2034 .
