PMV50UPE
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMV50UPE
Marking Code: CZ
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9
V
|Id|ⓘ - Maximum Drain Current: 3.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 700
nS
Cossⓘ -
Output Capacitance: 106
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.066
Ohm
Package:
SOT23
PMV50UPE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV50UPE
Datasheet (PDF)
..1. Size:721K nxp
pmv50upe.pdf
PMV50UPE20 V, single P-channel Trench MOSFET20 July 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits 3 kV ESD protected Trench MOSFET technology Low threshold voltage
..2. Size:361K tysemi
pmv50upe.pdf
Product specificationPMV50UPE20 V, single P-channel Trench MOSFET20 July 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits 3 kV ESD protected Trench MOSFET technology
9.1. Size:251K nxp
pmv50xp.pdf
PMV50XP20 V, P-channel Trench MOSFET19 November 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.