WNM2025 MOSFET. Datasheet pdf. Equivalent
Type Designator: WNM2025
SMD Transistor Code: W25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.7 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Drain Current |Id|: 3.6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 11.5 nS
Drain-Source Capacitance (Cd): 125 pF
Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm
Package: SOT23
WNM2025 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WNM2025 Datasheet (PDF)
1.1. wnm2025.pdf 
Size:442K _tysemi
Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS (V) Rds(on) (Ω) 0.027@ VGS=4.5V 20 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in 1 2
4.1. wnm2024.pdf Size:908K _willsemi
WNM2024 WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) (Ω) 0.027@ VGS=4.5V 20 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for us
4.2. wnm2020.pdf Size:440K _willsemi
WNM2020 WNM2020 Http://www.sh-willsemi.com N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( ) D 0.220@ VGS=4.5V 20 0.260@ VGS=2.5V S 0.320@ VGS=1.8V G SOT-23 Descriptions The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D with low gate charge. This device is suitable for
4.3. wnm2021.pdf Size:502K _willsemi
WNM2021 WNM2021 Http://www.sh-willsemi.com N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.220@ VGS=4.5V D 20 0.260@ VGS=2.5V S 0.320@ VGS=1.8V G SOT-323 Descriptions D The WNM2021 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable
4.4. wnm2023.pdf Size:388K _tysemi
Product specification WNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Rds(on) (Ω) 0.038@ VGS=4.5V 20 0.044@ VGS=2.5V 0.052@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC
4.5. wnm2024.pdf Size:393K _tysemi
Product specification WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) Rds(on) (Ω) 0.027@ VGS=4.5V 20 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in 1 2 DC
4.6. wnm2020.pdf Size:167K _tysemi
Product specification WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.220@ VGS=4.5V 20 0.260@ VGS=2.5V 0.320@ VGS=1.8V SOT-23 Descriptions The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate charge. This device is suitable for use in DC-DC convers
4.7. wnm2027.pdf Size:124K _tysemi
Product specification WNM2027 N-Channel, 20V, 3.6A, Power MOSFET Rds(on) Id V(BR)DSS (Max. mΩ) (A) 45 @ 4.5V 3.6 20 55 @ 2.5V 3.1 66 @ 1.8V 1.5 SOT-23 D Descriptions 3 The WNM2027 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC
4.8. wnm2020.pdf Size:1282K _kexin
SMD Type MOSFET N-Channel MOSFET WNM2020 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 20V ● ID = 0.83 A 1 2 ● RDS(ON) ＜ 310mΩ (VGS = 4.5V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 ● RDS(ON) ＜ 360mΩ (VGS = 2.5V) ● RDS(ON) ＜ 460mΩ (VGS = 1.8V) 1. Gate 2. Source D 3. Drain 3 1 2 G S ■ Absolute Maximum Ratings Ta = 2
Datasheet: PMV185XN , PMV33UPE , PMV50UPE , PMV65UN , PMV90EN , QM3001K , QM3007K , WNM2023 , 2SK2611 , WNM2027 , WNM2034 , XP151A11B0MR , XP151A12A2MR , XP151A13A0MR , XP152A11E5MR , XP152A12C0MR , CM100N03 .
