XP152A11E5MR Datasheet. Specs and Replacement

Type Designator: XP152A11E5MR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SOT23

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XP152A11E5MR substitution

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XP152A11E5MR datasheet

 0.1. Size:95K  tysemi
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XP152A11E5MR

Product specification XP152A11E5MR-G Power MOSFET GENERAL DESCRIPTION The XP152A11E5MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package mak... See More ⇒

 0.2. Size:300K  torex
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XP152A11E5MR

XP152A11E5MR-G ETR1120_003 Power MOSFET GENERAL DESCRIPTION The XP152A11E5MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high de... See More ⇒

 7.1. Size:2336K  htsemi
xp152a12comr.pdf pdf_icon

XP152A11E5MR

XP152A12COMR 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130m RDS(ON), Vgs@-2.5V, Ids@-2.0A 190m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.0... See More ⇒

 7.2. Size:644K  shenzhen
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XP152A11E5MR

Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel Power MOS FET Applications Notebook PCs DMOS Structure Cellular and portable phones Low On-State Resistance 0.3 (max) On - board power supplies Ultra High-Speed Switching Li - ion battery systems Gate Protect Diode Built-in SOT -... See More ⇒

Detailed specifications: QM3007K, WNM2023, WNM2025, WNM2027, WNM2034, XP151A11B0MR, XP151A12A2MR, XP151A13A0MR, IRL3713, XP152A12C0MR, CM100N03, CM10N40, CM10N60, CM10N60AFZ, CM10N60AZ, CM10N60F, CM10N65AFZ

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