CM12N65AF Datasheet and Replacement
Type Designator: CM12N65AF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO220FH
- MOSFET Cross-Reference Search
CM12N65AF Datasheet (PDF)
cm12n65af.pdf
RCM12N65AF www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 12
cm12n65a to220a.pdf
RCM12N65A www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 3
cm12n65 to220a.pdf
RCM12N65 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS
cm12n65f.pdf
RCM12N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 1 2
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700
Keywords - CM12N65AF MOSFET datasheet
CM12N65AF cross reference
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History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700
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